隧道磁电阻（tunneling magnetoresistance，TMR）效应自发现一直是磁学领域研究的热点方向，TMR多层膜作为磁随机存储器中的存储单元和智能电网中的电流传感器都有广阔的应用前景，但是目前还有一些需解决的问题。本项目把微磁学理论和实验研究相结合，在理解多层膜基本磁性的基础上，对应用中的问题予以分析和解决。拟研究的主要内容包括：（1）构建TMR多层膜的准确微磁学模型，对其基本磁性给予解释，并结合TMR存储器方面的工业进展，优化存储器件设计；（2）通过微磁学模拟和实验测量相辅相成的手段研究结构、材料本身等因素对TMR多层膜线性响应特性的影响规律，进而针对智能电网中的需求设计和优化传感系统所用的隧道结材料体系和具体结构；（3）研究不同铁磁层材料，不同制备工艺，不同形状、几何尺寸的自由层等因素对隧道结噪声等特性的影响，辅以微磁学计算，进而找到抑制磁性隧道结低频噪声的方法。

Tunneling magnetoresistance(TMR) effect is an active research field of magnetism ever since its discovery.TMR multilayers have profound potential as memery cells in MRAM and current sensors in smart power network.However, there are several problems needed to be settled before they come into industrialization.In this project, micromagnetic study and experimental research are combined, in order to analyze and solve the issues met with applications. Our research includes the following aspects: (1)establish an accurate micromagnetic model of the TMR multilayers, according to the progresses in the memory industry, optimize the design of TMR memory cells; (2)understand the influence of TMR structure and materials on the transfer curve of the TMR multilayer, therefore, design and optimize the specific materials and TMR structure of the TMR sensor used in smart power network; (3)understand the influence on the noise of TMR devices from the aspects of ferromagnetic materials, preparation procedure and the size and shape of free layer, so as to find the method to suppress the noises in applications.