本项目将以获得结构简单新颖、绿色清洁廉价、材料来源丰富的导电玻璃FTO/n-SnS2/p-SnS/金属背电极的薄膜太阳电池为目标，通过利用SnS2和SnS粉体为源，采用近空间升华法沉积SnS2和SnS薄膜，构建元素组成相同、价态不同的同素异价SnS2/SnS异质结的薄膜太阳电池。研究薄膜的制备和锑、银等掺杂后处理对其组成、微结构和物理性质的影响，明确近空间升华法制备SnS2和SnS薄膜的反应原理，揭示薄膜的组成、微结构和物理性质与太阳电池光伏性能之间的关系，阐明同素异价SnS2/SnS异质结中的界面特性、能隙匹配、异质结过渡、载流子的输运和有效收集问题，建立同素异价SnS2/SnS异质结能带结构模型和输运理论。因此，开展p-n结为同素异价SnS2/SnS异质结薄膜太阳电池的基础研究，对丰富薄膜太阳电池的理论与实践，发展低成本、可规模化开发利用的新型太阳电池，具有重要的理论意义和应用价值。

In this proposal, the main purpose is to obtain the thin film solar cells with the simple and novel structure of FTO/n-SnS2/p-SnS/metal back contact using the clean, inexpensive and abundant raw materials. The thin films of SnS2 and SnS are deposited by close-spaced sublimation technique using the powders of SnS2 and SnS as sources and the thin film solar cells based on the SnS2/SnS heterojunction with the same elements and different valences are fabricated. The influence of preparation and doping like antimony and silver on the composition, microstructure and physical property of the thin films is investigated. The reaction principle of the preparation of SnS2 and SnS thin films by close-spaced sublimation technique is revealed and the relationship between the composition, microstructure and physical property of the thin films and the photovoltaic performance of the solar cells is displayed. The interfacial characteristics, energy band gap match-up, heterojunction transition, the carrier transportation and effective collection of SnS2/SnS heterojunction with the same elements and different valences is elaborated, also the energy band gap structural model and the theory of transportation of SnS2/SnS heterojunction is established. Therefore, the fundamental research on the thin film solar cells based on the SnS2/SnS heterojunction with the same elements and different valences is useful to enrich the theory and practice of the thin film solar cells, develop the low-cost and scale manufactural novel solar cells and is of great theoretical significance and application value.