随着芯片尺寸不断缩小、功能更加强大，以3D叠层芯片为代表的高性能、高封装密度电子器件中出现全IMC互连凸点。虽然业内普遍认为室温下IMC呈脆性，但是随着工作温度升高IMC变形能力不断增强，可能显著改善IMC互连凸点的脆性和可靠性。本项目将系统地研究高温下IMC脆性-韧性转变行为及主要影响因素，探索脆性-韧性转变特点，表征转变前后IMC的变形机制及断裂行为；同时，基于分子动力学构建IMC高温脆性-韧性转变仿真模型，从原子尺度揭示相变、晶粒取向、应变速率对IMC脆性-韧性转变行为及机理的影响；最后，针对典型全IMC互连凸点，在脆性温度区间和韧性温度区间下分别进行疲劳寿命测试，研究脆性-韧性转变行为对全IMC互连凸点可靠性的影响，验证提出的脆性-韧性转变机理。本项目的顺利实施将率先揭示IMC高温力学特征转变机制，为高集成度、高性能模块的可靠性提升、设计优化等方面提供新的理论和方向。

Because of the demands of smaller size and more powerful performance, interconnects evolved to full IMC (Intermetallic compound) interconnect in high performance chip, such as 3D stacked chips. Though it is believed that IMC is brittle at room temperature, the deformation capability of IMC improved significantly with elevating temperature, which can notably improve its brittleness and reliability. In this project, brittle-ductile transition and main factors will be investigated systematically. Deformation mechanisms and fracture behaviors of IMCs before and after the transition will also be studied. Furthermore, molecular dynamics will be employed to reveal transition mechanism of IMCs. The effect of phase transition, grain orientations and loading rates on the brittle-ductile transition behavior will also be studied. Based on this, theoretical model will be proposed for the transition of IMCs at high temperature. It will be verified by fatigue tests on representative full IMC interconnects at temperatures lower and higher than transition temperature, respectively. So that, the effect of brittle-ductile transition on the reliability of interconnect will be revealed. This project can significantly improve the lack of data on the transition behavior of IMCs at high temperature. It can facilitate the reliability improvement and design optimization of high performance chips from theoretical and technological sides.