钙钛矿单晶薄膜的陷阱态密度及其在场效应晶体管中的作用机制研究

基于有机/无机杂化钙钛矿多晶薄膜的场效应晶体管(FET)的研究进展缓慢，目前所报道的场效应载流子迁移率仍然较低。这与钙钛矿薄膜的晶体结构、表面形貌，特别是其陷阱态密度密切相关。在已证实钙钛矿单晶具有很低的陷阱密度（Ntraps=10E9~10E10 cm-3）的基础上，本项目拟以钙钛矿单晶薄膜为研究对象，以玻尔兹曼理论为方法，建立受钙钛矿陷阱态密度影响的载流子传输理论模型，通过光谱学、形貌学、电传输性质等表征手段，研究钙钛矿单晶薄膜的陷阱态密度及载流子传输相关影响机制。揭示陷阱的发生、发展过程，阐明其在钙钛矿场效应载流子传输中的工作机理，从而推动基于钙钛矿材料的场效应晶体管研究的发展。本项目研究的理论和方法不仅为制备高载流子迁移率FET提供关键参数，也为进一步推动基于钙钛矿材料的其他光电器件研究发展，拓宽其应用范围提供相关科学依据。

The progress of field effect transistor (FET) research based on organic/inorganic perovskite polycrystalline thin films has been slow, and the reported carrier mobility is low. The carrier mobility is believed to be closely related to the crystalline structure, surface morphology, and large trap density of perovskite polycrystalline thin films. Based on the established finding that perovskite single crystals have a low trap density (Ntraps=10E9~10E10 cm-3), in this project, we aimed at investigating the trap density of perovskite single crystal thin films and utilize them for high performance FET devices. Using the Boltzmann theory as research method, we will try to set up a trap density dependent carrier transportation theory model. By exploring the behavior and development processes of trap density, we plan to clarify how trap density affects the carrier mobility of FET devices. Eventually, we will push forward the development of FET based on perovskite materials. The strategy and theory utilized in the project will not only provide key parameters for achieving high carrier mobility FET, but also motivate further optoelectronic research by providing more scientific ground for a wide range of applications.