晶圆级二维金属硫化物薄膜生长机制、缺陷调控及晶体管性能研究

本项目以后摩尔时代集成电路发展的国家需求为牵引，瞄准先进微电子器件中非硅材料晶圆级制备技术难题，以性能优越的二维过渡金属硫化物(MS2)超薄膜晶圆级制备为主要研究内容，展开从生长机理、缺陷控制到原型器件制备的完整链条研究。项目采用原子层沉积(ALD)技术来制备二维MS2薄膜，首先运用第一性原理和分子动力学研究ALD生长MS2薄膜的表面反应机制；并采用衬底表面预处理技术改善ALD制备大面积、均匀的二维MS2薄膜能力，建立ALD 生长MS2薄膜质量与工艺参数之间的依赖关系；接着提出采用高温退火与化学气氛法成膜后处理工艺减少薄膜缺陷，以便掌握制备晶圆级的单层或少层MS2晶体的关键工艺技术。在实现二维MS2薄膜可控制备和器件性能仿真的基础上，制备出具有高迁移率、大开关比的场效应晶体管原型器件。项目的实施将有助于解决二维材料晶圆级制备难题，为将来基于MS2超薄膜的逻辑器件大规模集成奠定基础。

This project is aiming to solve the key technology problems for the fabrication of non-silicon semiconductor materials in a wafer level, which is very important for the development of integrated circuit in the More Moore era. The transition metal two-dimensional sulfide (MS2) ultrathin films is selected as the main research contents, including growth mechanism, defect control and prototype device fabrications. The project uses the atomic layer deposition (ALD) technique to fabricate the two-dimensional MS2 films. The surface reaction mechanisms of ALD MS2 thin film will be first studied using first principle theory and molecular dynamics. The substrate surface pretreatment technologies will be then proposed to prepare the large area, uniform two-dimensional MS2 films. The dependencies between ALD MS2 film and the growth parameters will be established after the process optimization. Moreover, the high temperature annealing treatments and chemical method will be used to reduce the defects of the ALD MS2. The key technologies for the preparation of one or few layers wafer level MS2 crystal thin films will be mastered after the process development. Based on the simulation of the controllable preparation of two-dimensional MS2 thin film, a prototype transistor with high mobility and large switching ratio is expected to be fabricated. The implementation of the project will help to solve the problems of wafer level 2D MS2 preparation. It will lay the foundation for the large-scale integration of 2D MS2 thin film logic devices in the future.