Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films
Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films
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原子层沉积非晶 Zn 掺杂 Ga2O3 薄膜的生长特性、成分和性能研究
DOI：
10.1016/j.apsusc.2019.01.177
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发表时间：
2019-05
影响因子：
6.7
通讯作者：
Feng Ji Jun
中科院分区：
文献类型：
--
作者：
Tao Jiajia;Lu Hong Liang;Gu Yang;Ma Hong Ping;Li Xing;Chen Jin Xin;Liu Wen Jun;Zhang Hao;Feng Ji Jun
分别以二乙基锌和水作为热原子层沉积（TH-ALD）的前驱体，以三甲基镓和氧气等离子体作为等离子体增强原子层沉积（PE-ALD）的反应物，制备了Ga2O3薄膜。在200 ° C的低温下，采用PE-ALD法和TH-ALD法制备了Zn掺杂的Ga2O3（ZGO）薄膜。结果表明，ZGO薄膜为非晶态，ZnO薄膜为晶态。XPS结果表明，ZGO薄膜中Zn的含量从9.70原子%增加到24.65原子% Ga_2O_3与ZnO的循环比从7：1下降到3：1，氧空位从27.65%上升到37.93%。Zn掺杂含量的增加也伴随着ZGO膜的形态、电学和光学性质的显著变化，包括膜密度和电阻率的降低、RMS粗糙度的增加、紫外-可见（UV-vis）区域的强透射率以及带隙从4.64 eV加宽至5.25 eV。这些发现有助于存款ZGO薄膜具有电子器件应用所需的结构和性能。
Diethylzinc and H2O were used as the precursors for the thermal atomic layer deposition (TH-ALD) of ZnO deposition while the trimethylgallium and O2plasma were used as a reactant for the plasma-enhanced atomic layer deposition (PE-ALD) of Ga2O3, respectively. The Zn-doped Ga2O3(ZGO) films were fabricated by a combination of PE-ALD of Ga2O3and TH-ALD of ZnO at a low temperature of 200 °C. The results show that as-deposited ZGO films were amorphous while ZnO with a crystalline structure. XPS results indicate that the Zn content in ZGO films increased from 9.70 to 24.65 at.% with the cycle ration of Ga2O3with respect to ZnO decreasing from 7:1 to 3:1 while the oxygen vacancy increased from 27.65% to 37.93%. The rise in Zn doping contents is also accompanied by significant variations in the morphological, electrical, and optical properties of the ZGO films, including a decrease of film density and resistivity, an increase of RMS roughness, a strong transmittance in the ultraviolet-visible (UV–vis) area, and a widening of the band gap from 4.64 to 5.25 eV. These findings help deposit ZGO films with desired structure and properties for electronic device applications.
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影响因子：
6.7
作者：
Ke-Jia Qian;Sun Chen;B. Zhu;Lin Chen;S. Ding;Hongliang Lu;Qingqing Sun;David-Wei Zhang;
通讯作者：
Ke-Jia Qian;Sun Chen;B. Zhu;Lin Chen;S. Ding;Hongliang Lu;Qingqing Sun;David-Wei Zhang;
影响因子：
6.2
作者：
T. Rao;M. Kumar;N. Hussain
通讯作者：
T. Rao;M. Kumar;N. Hussain
DOI：
10.3390/nano6050088
发表时间：
2016-05-10
期刊：
Nanomaterials (Basel, Switzerland)
影响因子：
--
作者：
Wang FH;Chen KN;Hsu CM;Liu MC;Yang CF
通讯作者：
Yang CF
影响因子：
5.2
作者：
Ji-Hong Kim;S. Koo
通讯作者：
Ji-Hong Kim;S. Koo
影响因子：
29.4
作者：
Lee, Yun Seog;Chua, Danny;Buonassisi, Tonio
通讯作者：
Buonassisi, Tonio