基于反常霍尔效应的新型自旋电子材料微结构调控和电磁性能

本项目力图解决在实现新型以霍尔自旋阀为基础的自旋电子学元件所遇到的一些基础性的问题。深入理解霍尔自旋阀中反常霍尔效应和磁各向异性的机理，并建立相关模型；优化出具有良好电磁性能的可以实现高输出信号、低矫顽力、高热稳定性的霍尔自旋阀材料。拟解决的关键科学问题是：（1）调控霍尔自旋阀材料磁各向异性，揭示其物理机制；（2）调控霍尔自旋阀材料中两铁磁层间的磁耦合，阐述其物理机理；（3）如何提高铁磁层的反常霍尔效应？界面散射如何作用于反常霍尔效应？霍尔自旋阀体系中内禀机制和外禀机制对反常霍尔效应的贡献？（4）如何实现利用电场来辅助操控霍尔自旋阀结构中的磁矩方向？（5）揭示界面原子结构、原子化学状态等界面行为及其与相应物理效应之间的关系，指导基于反常霍尔效应的新型自旋电子材料设计与制备，并优化其电磁性能。

This project aims at the fundamental problems that will be encountered in realization of a brand new spintronic elements based on the anomalous Hall effect (AHE) in a spin-valve-like structure. The AHE mechanism and the magnetic anisotropy as well as the exchange coupling in the multilayered structures with metal/insulator interface will be studied with emphasizing the interplay of AHE/anisotropy/exchange coupling and the artificial structures. Finally the Hall spin valve (HSV) films with large three-level-output AHE signals, low coercivity, and high thermal stability will be developed.The Key scientific issues include: (1) How to tune the magnetic anisotropy of the AHE materials? (2) How to tune the interfacial exchange coupling between the two ferromagnetic layers in HSV? (3) How to effectively enhance the AHE in HSV? (4) How can realize the electric field assisted magnetization switching (VIMS) in HSV? (5) What is the relationship between interfacial microstructures, chemical states, and the corresponding physical properties.