基于霍尔自旋天平结构的新型自旋电子材料及物理机制研究

本项目力图解决在实现新型以霍尔自旋天平材料为基础的自旋电子学元件所遇到的一些基础性的问题。深入理解霍尔自旋天平材料中反常霍尔效应和磁各向异性的机理，并建立相关模型；优化出可以实现高输出信号、低矫顽力、高热稳定性的霍尔自旋天平材料。拟解决的关键科学问题是：（1）如何调控霍尔自旋天平材料磁各向异性？（2）如何提高铁磁层的反常霍尔效应？界面散射如何作用于反常霍尔效应？霍尔自旋天平体系中内禀机制和外禀机制对反常霍尔效应的贡献？本项目还拟研究利用电场来辅助操控霍尔自旋天平结构中的磁矩方向，揭示界面微结构、原子化学状态与相应物理效应之间的关系。

This project aims at the fundamental problems that will be encountered in realization of a brand new spintronic elements based on the extraordinary Hall balance （EHB）. The mechanism and the magnetic anisotropy in the multilayered structures with metal/insulator interface will be studied. Finally the EHB films with large four-level-output EHE signals, low coercivity, and high thermal stability will be developed.The Key scientific issues include: (1) How to tune the magnetic anisotropy of the EHB materials? (2) How to effectively enhance the extraordinary Hall effect in EHB? Moreover,we study how to realize the electric field assisted magnetization switching (VIMS) in EHB and reveal the relationship between interfacial microstructures, chemical states, and the corresponding physical properties.