磁性多层膜中氧化物/铁磁界面氧迁移机理研究

纳米磁性多层膜材料可广泛地应用在高密度、低能耗的磁随机存储器件、量子计算、纳米线逻辑器件及生物医疗等各个方面，许多相关物理现象表明，磁性多层膜中的氧离子行为对于器件的性能有着很重要的影响。本项目主要是通过对磁性多层膜中氧化物/铁磁异质界面氧行为开展研究，提出采用不同能量的沉积方式制备薄膜（例如磁控溅射、脉冲激光沉积、分子束外延、甚至电镀等），以及再通过多场耦合（电场、应力场、热场等）作用、还有再通过插层等方式改变氧原子周围配位环境，研究氧迁移是否发生？弄清出影响氧迁移的主要因素、发生条件、以阐明氧迁移变化的规律。提出利用小角XPS功能(含有反射电子能量损失谱REELS功能)、原位Ar离子扫描低能蚀刻技术及成像功能（XPI），获得原子不同化学状态空间分布图像及原子的扩散情况；再通过相关界面微结构、电子结构分析等研究，阐明磁性多层膜中氧化物/铁磁异质界面氧迁移的物理机制。

The magnetic multilayers can be widely used in various application fields such as high-density low-energy magnetic random access memory, quantum computing, nanowire logic devices, and biomedicine. Many physical phenomena demonstrate that the oxygen behaviors in magnetic multilayers play a very important role in determining the properties of the device. This project is mainly to study the oxygen behaviors at the oxide/ferromagnet interface in magnetic multilayers. It is proposed to use different energy deposition methods to prepare the nanometer multilayers, such as magnetron sputtering, pulsed laser deposition, molecular beam epitaxy, and even electroplating. Furthermore, whether the oxygen migration occurs at the interface is studied by changing the coordination environment around the oxygen atoms, which is induced by the multi-field coupling (electric field, stress field, thermal field and etc.) and introducing the insertion. By clarifying the main factors of the oxygen migration and the conditions of its occurrence, it can illuminate the rule resulting the oxygen migration changed. It is proposed to use the XPS, which contains the small-angle XPS detection, the reflected electron energy loss spectroscopy (REELS), the in-situ Ar+ scanning low-energy etching technology and the imaging function (XPI), to obtain the spatial distribution image of atoms in different chemical states and the information about the atoms diffusion. Then the physical mechanism of the oxygen migration at the oxide/ ferromagnet interface in magnetic multilayers can be clarified by the study about the interface microstructure and electron structure analysis.