本项目是针对绿色激光器的需求，研究InGaN量子点的MOCVD生长机制，阐明相关物理特性，获得高质量的InGaN量子点材料，并研究InGaN量子点在绿色激光器的应用，实现性能调控。研究生长参数对InGaN量子点生长的影响，揭示热失配和局域应力对量子点形成过程的影响机制，建立InGaN量子点的MOCVD生长动力学模型；掌握高均匀性高密度InGaN量子点结构的制备方法和技术，实现在组分、尺度和密度方面的可控生长；研究InGaN量子点材料的物理性质，发展相关的性质检测技术；研究载流子注入、输运、捕获等过程，澄清InGaN量子点电注入发光机理，并进行激光器生长和制备，研究并解决InGaN量子点作为有源区在绿色激光器的应用问题。本项目的研究最终为基于InGaN量子点的绿色激光器奠定关键材料基础。

In this project, for the application in green semiconductor laser diodes, the meterials growth of InGaN quantum dots by metalorganic chemical vapor deposition are investigated. The high quality InGaN quantum dots will be obtained, on the basis of studying and clarifying the details about the growth mechanism and the physical properties. Firstly the effect of growth parameters on the InGaN quantum dots formation are researched, especially the influence of thermal mismatch and local stress on the InGaN quantum dots growth are discussed, the corresponding growth model will be established. Then the method about the InGaN quantum dots with high uniformity and density are discovered, and the In content and size of InGaN quantum dots could be controlled, at the same time, the physical properties of InGaN quantum dots are analyzed. Finally , after the fabrication of light-emitting diodes or laser diodes, the electro-luminescence of InGaN quantum dots are measured, the physical mechanism will be better understood after studying the process of carriers injection, transport and capture in the device. Furhtermore, the application in the green laser diodes are investigated, where the InGaN quantum dots are employed as the active layer. The research results will provide fundamental materials for the realization of InGaN quantum dots related green laser diodes.