基于ZnO/ZnTe量子点修饰的高效宽波段石墨烯光电探测器的机理研究

基于新型二维石墨烯材料光电探测器件的研制是目前研究热点之一，如何设计器件结构来提升器件的稳定性、实现高灵敏度的宽波段探测，仍是目前亟待解决的重要问题。申请人拟采用Graphene与ZnO/ZnTe复合量子点构成的复合结构，充分发掘二维材料和量子点材料的结构特点，制备高效的宽波段光电探测器。利用Graphene对所有波段的光无选择性吸收，可以极大的拓宽所研制光电探测器的探测范围；利用ZnO、ZnTe材料分别对紫外光和可见光优良的敏感性，可以很好的增强光电探测器对紫外光和可见光的探测性能。研究Graphene材料的晶体质量、缺陷类型和表面态对器件光电性能的影响。通过逐步优化和改善ZnO和ZnTe量子点的制备工艺和参数，进一步提高空穴和电子的电注入平衡，降低光生载流子复合几率。研究对光电探测器敏感波长的影响及相应探测机理，为进一步推进石墨烯二维材料的光电探测应用提供指导。

Solid-state photodetectors (PDs) based on novel two-dimensional graphene materials have attracted extensive attention at present. How to design a PD layout to enhance the long-term stability and realize wide band detection with high sensitivity, however, is still the unsolved obstacles and needs more investigations. In this application, to solve the problems mentioned above, composite structures constructed by graphene and ZnO/ZnTe quantum dots are utilized to fully explore the structural characteristics of two-dimensional materials and quantum dots, in order to fabricate high efficiency wide band PDs. It can greatly broaden the detection range of the detector using graphene’s absorption of lights in all bands. ZnO and ZnTe have good sensitivity to UV and visible lights which can improve the detection performance of UV and visible lights. Impacts of the graphene crystalline quality, defect type, and surface states on the performance of the PDs will be investigated in order to further improve the photoelectric detection performance. With perfecting the growth parameters of ZnO and ZnTe quantum dots, balancing of the charge injection should be improved and the recombination of photo-generated electrons and holes should be reduced. Further investigation on the detection properties and related mechanisms will be conducted with stacked quantum structures. Proposals to further improve the performance of the graphene PDs will be given. All the efforts in this application aim to push the investigation and commercialization of the graphene PDs forward.