High mobility amorphous InSnO thin film transistors via low-temperature annealing
High mobility amorphous InSnO thin film transistors via low-temperature annealing
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通过低温退火制备高迁移率非晶 InSnO 薄膜晶体管
DOI：
10.1063/5.0131595
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发表时间：
2023-01
影响因子：
4
通讯作者：
Zhihua Zhu
中科院分区：
文献类型：
--
作者：
Mengzhen Hu;Lei Xu;Xinnan Zhang;Hanyuan Hao;Shi Zong;Haimin Chen;Zengcai Song;Shijun Luo;Zhihua Zhu
在这篇文章中，我们制作了具有极高的迁移率和低热预算的非晶InSnO薄膜晶体管（TFT）。该器件仅在150 °C的低温下退火，场效应迁移率（[公式：见正文]）为70.53 cm 2/V s，亚阈值摆幅为0.25 V/decade，开/关电流比超过108，并且在负偏置应力下具有合理的阈值电压漂移。通过系统分析InSnO薄膜的晶化、表面形貌、内部化学状态和能带关系，研究了热退火对非晶InSnO TFT的影响。室温下沉积的非晶InSnO薄膜具有稀疏多孔的疏松结构，薄膜质量差导致载流子散射，导致薄膜中迁移率低，自由载流子少。随着退火温度的升高，In和Sn金属阳离子被进一步氧化，增加了膜中的载流子浓度，并在150 °C退火时形成致密的M-O-M网络。随着退火温度的进一步升高，大量的热激发自由电子使器件呈现类金属导电性。本文的研究拓展了高电子浓度InSnO材料作为有源层的研究，促进了非晶氧化物半导体在高迁移率和柔性TFT中的发展。
In this article, we fabricated amorphous InSnO thin film transistors (TFTs) with exceedingly high mobility and low thermal budget. The device is annealed only at a low temperature of 150 °C, a field-effect mobility ([Formula: see text]) of 70.53 cm2/V s, a subthreshold swing of 0.25 V/decade, an on/off current ratio over 108, and a reasonable threshold voltage shift under negative bias stress. The influence of thermal annealing on amorphous InSnO TFTs was investigated by systematically analyzing the crystallization, surface morphology, internal chemical state, and energy band relationship of the InSnO thin film. Amorphous InSnO films deposited at room temperature have a sparse and porous loose structure, which has carrier scattering caused by poor film quality, resulting in low mobility and few free carriers in the film. With the increase in the annealing temperature, the In and Sn metal cations are further oxidized, increasing the carrier concentration in the film and forming a dense M–O–M network when annealed at 150 °C. With the further increase in the annealing temperature, a large number of thermally excited free electrons make the device appear metal like conductivity. This paper expands the research on a high electron concentration InSnO material as the active layer and promotes the development of amorphous oxide semiconductors in high mobility and flexible TFTs.
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影响因子：
64.8
作者：
Nomura, K;Ohta, H;Hosono, H
通讯作者：
Hosono, H
影响因子：
3.5
作者：
Linkang Li;Jun Li;Wenhui Fu;Dongliang Jiang;Yanjie Song;Qiuhong Yang;Wenqing Zhu;Jianhua Zhang-Jianhua-Z
通讯作者：
Linkang Li;Jun Li;Wenhui Fu;Dongliang Jiang;Yanjie Song;Qiuhong Yang;Wenqing Zhu;Jianhua Zhang-Jianhua-Z
影响因子：
5.2
作者：
Changjin Oh;H. Jung;So Hee Park;Bo Sung Kim
通讯作者：
Changjin Oh;H. Jung;So Hee Park;Bo Sung Kim
影响因子：
26.6
作者：
Liang K;Li D;Ren H;Zhao M;Wang H;Ding M;Xu G;Zhao X;Long S;Zhu S;Sheng P;Li W;Lin X;Zhu B
通讯作者：
Zhu B
DOI：
10.2139/ssrn.4122742
发表时间：
2022-08
期刊：
SSRN Electronic Journal
影响因子：
--
作者：
Mengzhen Hu;Lei Xu;Xinnan Zhang;Zengcai Song;Shijun Luo
通讯作者：
Mengzhen Hu;Lei Xu;Xinnan Zhang;Zengcai Song;Shijun Luo