金刚石氮-空位（N-V）中心为室温下最有潜力实现量子计算的优良载体，在量子信息处理和精密传感领域具有重要应用前景。然而，现阶段走向实际应用仍受到严重限制：首先，含N-V中心天然钻石稀有、昂贵、难以复制，N-V中心含量低，难以满足实际应用需求；其次，纳米钻石中残存顺磁性杂质严重影响N-V中心产生字节的稳定性。利用机械手段在N掺杂钻石表面制造空位，在提高N-V中心浓度的同时，也会损伤晶体，严重影响其机械、光学及热学稳定性。针对以上问题，本项目拟利用高温高压技术合成大尺寸、高质量、含可控N-V中心的金刚石，研究其生长过程中N-V中心的择优取向性与形成机制，分析影响N-V中心浓度的因素，探索高温退火处理与微量元素（B、H、O）掺杂对N-V中心的调整机制与电荷调控机理。开展本项目将为实现N-V中心的可控制备提供具有实际应用价值的技术储备，对促进和拓宽N-V中心的应用开发具有重要的科学意义和应用价值。

Nitrogen vacancy (N-V) centers in diamond have emerged as promising systems for quantum information applications and precision sensing as room-temperature single-photon sources. The natural diamond containing NV centers is rare, expensive and nonrepeatability, with low N-V content that has limited its wide applications. The residual paramagnetic impurities in nano-diamonds seriously affect the stability of N-V centers bytes. Currently, an effective way to improve N-V content is to make some vacancies on the surface of nitrogen-doped diamond by mechanical methods. However, the diamond substrate will also be damaged during N-V centers incorporating, which could degrade its mechanical, optical properties and thermal stability. In this project, the applicant will focus on the study of controlled fabrication of N-V centers during diamond growth process. Considering the effect of growth conditions and environment, here we propose to study the distribution rules and preferential orientation of N-V centers in as-grown diamonds under high pressure and high temperature (HPHT) conditions. Moreover, we will investigate the correlation between the N-V ratio and N content in produced diamonds, and study the adjusting mechanism and charge transition for N-V centers through HPHT annealing experiments and addition of trace elements (B, H, O). This proposal will provide significantly useful information for controlled fabrication of N-V centers in diamond under HPHT conditions, and provide new strategy for broadening the future applications of N-V centers.