利用范德华外延生长原理在类石墨烯二维晶体表面生长III-V族纳米线形成异质结，可充分发挥两类半导体优异光学性能的同时避免各自缺点，且能开发任意类型的能带结构，在未来新型光电器件和纳电子器件中具有重要应用。然而这新兴研究领域的发展受制于范德华外延生长机理的缺失。因此,本项目拟以类石墨烯二维材料表面上外延生长InP为对象：1) 优化二维材料表面改性工艺及纳米线外延生长参数，实现高品质单晶InP纳米线的可控范德华外延生长；2）利用电子显微镜测定纳米线在二维材料表面的生长情况及界面结构，分析其形核长大过程，结合第一性原理计算及晶体生长原理，建立普适的纳米线范德华外延生长机理；3）使用时间分辨荧光光谱等光学测量手段分析InP纳米线-二维材料新型异质结的特异光学性质，并探索这种结构在柔性光电探测领域的应用。项目最终建立范德华外延生长无机半导体的基本原理，为其它新型异质结的开发提供一种可借鉴的研究思路。

Growing III-V nanowires on graphene-like two-dimensional (2D) materials by Van der Waals epitaxy principle can exploit the superior optical properties of these semiconductor materials while avoiding their drawbacks. Besides, these hybrid-heterostructures can be designed to present any type of band structure, thus posing great applications in the future nanoelectronics and optoelectronics devices. However, lacking proper growth mechanism of Van der Waals epitaxy restricts the development of this new research field. Therefore, this proposal, choosing InP growth on graphene-like 2D materials as an example, is devoted to: 1) develop an efficient method to modify the surface energy of the 2D materials and optimize the nanowire growth parameters to realize controllable growth of single crystal InP nanowires; 2) establish a solid growth model for Van der Waals epitaxy of III-V semiconductor nanowires via a combined analysis approach by electron microscopy studies of the nucleation and growth behavior of InP on 2D material substrates, first principle calculations and crystal growth principle; 3) characterize the unique optical properties of the hybrid-heterostructure using time-resolved photoluminescence and related optical techniques and explore its potential applications in the photodetection field as soft-devices. The successful completion of this project is expected to master the growth fundamental of Van der Waals epitaxy of inorganic nano-semiconductors, thus providing a scientific method and principle for the design and growth of other hybrid-heterostructure.