形貌可控磷化铟阵列的生长机制、光学物性及激光应用

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中文摘要
磷化铟纳米线具有优异的光学特性,在光子学及光电等领域都具有重要应用。然而纳米线的形貌限制了其应用范围。本项目在纳米线基础上,通过图形衬底的形状设计,实现以二维纳米片、圆环为代表的磷化铟阵列的外延生长。主要研究:①形貌可调磷化铟阵列的外延生长研究;②新形貌、晶体结构相关磷化铟光学物性研究;③圆环回音壁磷化铟激光的设计与开发。拟解决科学问题为:①不同形貌结构磷化铟的外延生长机制问题。②磷化铟光学物性与形貌及晶体结构之间的关联问题;③磷化铟微纳谐振腔形貌设计与激射特性之间的关系问题。创新点有:①改变图形衬底的形状设计,实现从一维纳米线到形状可调且分布均匀的磷化铟阵列外延生长研究;②借助新形貌及新结构探索载流子动态弛豫及复合过程;③利用光滑且缺陷少的晶面组成谐振腔,降低激光发射阈值。研究成果有望在纳米线领域外开拓出新的生长研究领域,为新形貌III-V族半导体的光子学应用开发提供新思路。
英文摘要
InP nanowires show superior optical qualities, thus are widely used for photonics and optoelectronics applications. However, the geometry of the nanowire restricts its application fields. Based on the nanowire research, this project tends to investigate the epitaxy of InP nanoshape pattern, such as two-dimensional nanosheet and micro-ring, by controlling the design of the pattern. To achieve these goals, the following major studies will be carried out: (1) selective area growth growth of InP pattern with tunable shapes; (2) Investigating the optical properties of InP caused by the new morphology and crystal structure. (3) Designing and exploring whispering gallery mode laser using InP microring. The following key scientific problems are inspected to be solved: (1) Revealing the growth fundamental of InP pattern with different shapes. (2) Corelating the optical performance with the morphology and crystal structure of InP; (3) Bridging the gap between the lasing performance and the morphology of the InP microcavity. The novelties of this proposal include: (1) Realizing the growth of uniform InP pattern with tunable morphology from one-dimenional nanowire to nanosheet and nanoring; (2) Revealing the carrier relaxation and recombination processes in InP with various morphology and crystal structure; (3) Reducing the lasing threshold by growing InP ring-like shape with smooth and less-defected crystal facets. After this project, these studies are expected to not only open a new epitaxial research field in addition to nanowire, but also offer new possibilities to develop photonic application of III-V semiconductor with new nanoshape
期刊论文列表
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科研奖励列表
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专利列表
DOI:10.1063/5.0044706
发表时间:2021
期刊:Applied Physics Reviews
影响因子:15
作者:Xiaoming Yuan;Dong Pan;Yijin Zhou;Xutao Zhang;Kun Peng;Bijun Zhao;Mingtang Deng;Jun He;Hark Hoe Tan;Chennupati Jagadish
通讯作者:Chennupati Jagadish
Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
InP 纳米线和纳米膜阵列中 InAsP 量子阱的面依赖性生长
DOI:10.1039/d0nh00410c
发表时间:2020
期刊:Nanoscale Horizons
影响因子:9.7
作者:Yuan Xiaoming;Wang Naiyin;Tian Zhenzhen;Zhang Fanlu;Li Li;Lockrey Mark;He Jun;Jagadish Chennupati;Tan Hark Hoe
通讯作者:Tan Hark Hoe
DOI:--
发表时间:2023
期刊:APL Photonics
影响因子:5.6
作者:Xinrong Zuo;Chenwei Zhu;Chenyu Yao;Zhen Hu;Yan Wu;Liuyan Fan;Zhifeng Li;Jun He;Xiaoshuang Chen;Xiaoming Yuan;Lin Wang;Wei Lu
通讯作者:Wei Lu
DOI:10.1021/acsami.1c19236
发表时间:2022-01
期刊:ACS applied materials & interfaces
影响因子:9.5
作者:Aswani Gopakumar Saraswathy Vilasam;P. K. Prasanna;Xiaoming Yuan;Zahra Azimi;F. Kremer;C. Jagadish;S. Chakraborty;H. Tan
通讯作者:Aswani Gopakumar Saraswathy Vilasam;P. K. Prasanna;Xiaoming Yuan;Zahra Azimi;F. Kremer;C. Jagadish;S. Chakraborty;H. Tan
DOI:10.1002/smll.202100263
发表时间:2021-04
期刊:Small
影响因子:13.3
作者:Naiyin Wang;W. Wong;Xiaoming Yuan;Li Li-Li;C. Jagadish;H. Tan
通讯作者:Naiyin Wang;W. Wong;Xiaoming Yuan;Li Li-Li;C. Jagadish;H. Tan
晶圆级氧化镓/氧化镍人工微结构异质结阵列生长及日盲紫外探测应用研究
- 批准号:2025JJ20064
- 项目类别:省市级项目
- 资助金额:0.0万元
- 批准年份:2025
- 负责人:袁小明
- 依托单位:
基于三维磷化铟纳米图形衬底的设计、外延生长及光电应用
- 批准号:--
- 项目类别:面上项目
- 资助金额:53万元
- 批准年份:2022
- 负责人:袁小明
- 依托单位:
纤锌矿砷化铟纳米结构阵列的外延生长及红外光电应用研究
- 批准号:2021JJ20080
- 项目类别:省市级项目
- 资助金额:0.0万元
- 批准年份:2021
- 负责人:袁小明
- 依托单位:
基于二硫化钼缓冲层的磷化铟纳米半导体外延生长动力学研究
- 批准号:2018JJ3684
- 项目类别:省市级项目
- 资助金额:0.0万元
- 批准年份:2018
- 负责人:袁小明
- 依托单位:
类石墨烯基底上III-V族纳米线范德华外延生长动力学研究
- 批准号:51702368
- 项目类别:青年科学基金项目
- 资助金额:24.0万元
- 批准年份:2017
- 负责人:袁小明
- 依托单位:
国内基金
海外基金
