GaAs基垂直腔面发射激光器(VCSEL)阈值低、波长均匀稳定、可靠性高，在光通信、激光打印、显示、识别、空间探索、国防等众多领域具有广泛应用。但我国目前尚未完全掌握其外延材料制备的核心技术。申请者将在之前边发射激光器界面结构研究的基础上，针对VCSEL材料界面成分•结构与器件性能之间的关系规律展开研究，包括：(1)设计并在MOCVD中合成具有量子点/量子阱有源区的VCSEL外延材料，研究量子点/量子阱界面形成过程及其生长动力学；(2)亚埃级水平表征界面结构，分析界面掺杂分布对于载流子输运过程的影响，揭示界面态、界面掺杂分布与光子损耗的内在关系，阐明通过降低载流子在界面处的损耗提高注入效率的机理；(3)研究通过调控界面能带结构，来消除界面处能带势阱或势垒以降低串联电阻、增强有源区的载流子限制效应、避免载流子泄漏的机理。为高性能GaAs基VCSEL外延材料的制备提供理论依据和实验数据。

GaAs based Vertical cavity surface-emitting laser (VCSEL) has the advantages of low threshold, uniform and stable wavelength and high reliability, and has been widely applied in the fields of optical communication, laser printing, display, identification, space exploration and defense. However, the core technologies for fabricating VCSEL epitaxial materials have not been completely mastered in our countries. In this research work, applicant will research the relationships between device performances and interface content•structure based on the previous research on edge-emitting lasers. Reasearches include as following: (1)Designing the VCSEL epitaxial structure and synthesize it with MOCVD, then researching the formation and growth dynamic of quantum dots/wells interfaces; (2)Characterizing interface structures in sub-angstrom scale. Analyzing the effect of interface doping profiles on carriers transport. Revealing the internal connections between optical losses and doping profiles and interface states. Illustrating the mechanism of improving carriers injection efficiency by suppressing carriers loss at interfaces; (3)Through Regulating the energy band structures, removing the potential welsl and barriers at interfaces to reduce series resistance, enhancing the carrier confinement of active zone, and avoiding the leakage of carriers. All these researches can provide theoretical foundation and experimental data.