界面原子行为对三维GaN基结构生长和光电性能的影响

本项目围绕界面原子结合、扩散等行为对三维GaN基外延结构的生长，乃至光电性能影响的关键问题开展：1）根据界面原子结合的基本性质，如：原子凝聚、原子团和界面形成过程中的原子结合和扩散等行为，理论模拟设计界面结构、外延结构及其制备工艺；2）采用MOCVD选择性外延生长技术制备GaN基微/纳米棒阵列，系统研究外延工艺对界面结构和三维GaN基微/纳米阵列的影响；3）通过高分辨透射电子显微镜（HRTEM）和高分辨X射线衍射(HRXRD)等测试技术对界面结构、成分进行表征；4）研究三维GaN基核-壳LED外延结构中的界面（表面）结构，包括化学成分、原子结构、电子结构和缺陷等对其光电性能的影响规律，为获得高性能的三维GaN基核-壳LED外延结构提供理论依据和实验数据。

The following research about the influence of interfacial atom behaviors including diffusion and bond on growth and photoelectric properties of GaN based 3D epitaxial structure will be carried out in this project: 1) According to the basic properties of interfacial atoms, such as condensed atoms，group of atoms, atom diffusion and bond behaviors during interface formation, interfacial structure, epitaxial structure and preparation processes will be designed; 2) Using selective epitaxial growth MOCVD technology, GaN based micro/nanorod arrays will be prepared. The influence of epitaxy technique on the interfacial structure and GaN based 3D micro/nanorod arrays will be studied; 3) The interfacial structure and composition will be characterized by HTTEM and HRXRD；4）The effect of interfacial (surface) structure in GaN based 3D core-shell LED including chemical composition, electronic structure and defects on photoelectric properties will be investigated, in order to obtain the theoretical basis and experimental data for GaN based 3D core-shell LED with high performance.