SiC功率电子器件有望在300℃以上使用，可大幅提升新能源、高铁、智能电网等领域关键器件的性能和可靠性，但耐高温芯片的连接仍是国际上尚未解决的难题。本项目提出利用超快激光烧蚀制备纳米复合材料，将其直接沉积到芯片待连接表面，保留其纳米尺度特征并形成疏松多孔结构，利用其纳米尺寸效应实现低温连接（<300℃）高温服役（>300℃），利用其纳米复合材料中的增强相调控热膨胀系数进而提高器件可靠性，利用其疏松性实现连接层的塑性变形进而自适应填充，同时不存在焊膏中的有机物进而将大大降低连接层中的气孔率。该电子封装材料制备与连接新方法的优势是：增强相均匀性和比例可控（在线可控沉积）、材料选择宽（超快激光可烧蚀几乎任何材料）、成本低（耗材仅为宏观材料）、半导体工艺兼容。项目从材料制备、连接工艺、可靠性三方面形成工艺链闭环，从疏松纳米复合材料制备原理、变形机制、连接及断裂机理、老化失效等多角度进行基础研究。

SiC power electronics can be used above 300℃. It will significantly enhance the performance and reliability of electric vehicle, high speed train, smart electric grid, etc. However, the bonding technology of the SiC chip die attach is still a global problem. This project proposes a new technology: Ultrafast laser deposition of nanocomposite film with loose network structure for high reliability bonding. The nanocomposites thin film are directly deposited on the SiC die surface. The nano size effect allows for low temperature bonding (<300℃)and high temperature service (300℃). The loose network structure has excellent plastic deformation, making the material fill the bond gap. No organic materials in the bonding interface make it has no gases trapped. This technology is controllable (deposition), broad material selection (ultrafast laser can ablate almost any solid material), low cost (only bulk material as consumable) and semiconductor compatible. This project contains the whole process chain, including material preparation, bonding process, and reliability test. The research contain includes the mechanisms of nanocomposites material deposition, deformation, bonding, fracture and reliability.