磁性半导体兼具半导体和磁性材料特征，可以将信息处理与存储功能集成在单一元件上，但磁性半导体的居里温度一般远低于室温，这极大地限制了磁性半导体器件的发展。TiO2是一种新型的第三代宽禁带半导体材料，在未掺杂状态和Co离子掺杂后均会表现出室温铁磁性，目前对TiO2基室温铁磁性的来源认识尚存在争议。因此系统性地开展TiO2基材料室温铁磁性的研究，对阐明稀磁半导体的磁性来源，揭示室温铁磁性的产生机制有重要意义。结合课题组前期实验与理论工作经验、成果，我们小组找到了一种方法有望彻底澄清室温铁磁性来源争议性的问题。拟采用电子辐照单晶金红石TiO2基的方式，通过调节电子能量和注量，人为调控样品中产生不同的缺陷类型和缺陷浓度，探索不同缺陷对TiO2基微结构和磁学性能的影响，阐明本征TiO2和TiO2:Co体系的室温铁磁性来源，为以TiO2基及其它材料研发磁性半导体器件奠定科学依据和参考。

Magnetic semiconductors have both of the characteristics of semiconductors and magnetic materials, which can integrate information processing and memory functions on a single component. However, the Curie temperature of magnetic semiconductors is generally much lower than room temperature, which greatly limits the development of magnetic semiconductor devices. TiO2 is a new type of third-generation wide bandgap semiconductor material. It exhibits room temperature ferromagnetism in the undoped and Co-doped samples，the current understanding of the origin of TiO2-based room temperature ferromagnetism (RTFM) is still controversial. Therefore, the systematic study of room temperature ferromagnetism of TiO2-based materials is of great significance for elucidating the magnetic source of dilute magnetic semiconductors and revealing the mechanism of room temperature ferromagnetism. Combining the previous experimental and theoretical work experience and results of the research group, we found a method to hopefully completely clarify the controversial issue of the origin of room-temperature ferromagnetism. Using electron irradiation of single crystal rutile TiO2 based, by adjusting the electronic energy and fluence, artificial regulation produces different types of defects and defect concentrations in the samples. Exploring different defects of TiO2-based microstructure and magnetic properties, the room temperature ferromagnetic origin of intrinsic TiO2 and TiO2:Co systems will be clarified, which lays a scientific basis and reference for the development of magnetic semiconductor devices TiO2-based and other materials.