自旋电子学器件在高密度存储器、自旋发光二极管、自旋极化场效应管、光隔离器、量子计算机等领域具有广阔的应用前景。然而由于受到对材料磁性来源认识不明的限制，自旋电子学器件的研究进展较为缓慢。宽禁带半导体材料TiO2因具有突出的电学与光学性质，在未掺杂状态下又会表现出d0磁性，是一种开发潜力巨大的新型半导体材料。目前对d0磁性的认识尚存在争议，开展对TiO2室温铁磁性的研究对揭示d0磁性规律，探索d0磁性的来源具有重要意义。在充分分析国内外技术路线并结合本小组前期工作的基础上，我们小组拟采用氘氘中子辐照单晶TiO2产生缺陷的方式，探索缺陷对单晶TiO2微结构、光学、电学及磁学性能的影响，希望澄清非掺杂状态下TiO2样品d0磁性起源机制这一国际前沿问题，为TiO2材料在自旋电子学器件的研发奠定工作基础。

High Curie temperature ferromagnetism in spintronics device has been the focus of recent research in the field of spintronics regarding the great potential for applications in high density non-volatile memory device, Spin-LED, Spin-FET, Optical Isolator, spin quantum computer, etc. TiO2 as a potential spintronics device is a versatile material that has attracted considerable interest in the research community due to its wide direct band gap and high-performance electronic properties. Among the studies of spintronics device, however, the discovery and understanding of such materials is proving to be a grand challenge in manipulating capability by coupling magnetic spins and free carriers in single matter at room temperature. The magnetic origin of different TiO2 systems is quite controversial nowadays, and a fundamental understanding of room temperature ferromagnetism in TiO2, therefore, is still one of the important subjects for the increased utility of TiO2 as a spintronics device material. In this study, based on the observation of d0 RTFM in undoped single-crystal TiO2 in our previous work, the D-D neutrons are going to be employed for the purpose of introducing much cleaner additional defects in TiO2 to investigate the irradiation effect on microstructure, optical properties, and the origin of magnetism both in experimental and theoretical aspects. Our group will endeavor to give a reasonable explanation of theoretical understanding of physical mechanisms underlying d0 magnetism in undoped TiO2 for the utilization of spintronics device in practical integrated devices.