石墨烯的零带隙结构使石墨烯代替硅用在电子或光电子领域中具有很大的挑战，因而通过把石墨烯和硅耦合，改进硅器件的物理性能或者发展具有优异物理性能的石墨烯-硅异质结器件具有重要的研究意义。基于此，在前期研究的基础上，联合北京同步辐射相关实验站，拟进行以下研究：（1）基于MBE技术在Si、h-BN/Si和Oxide/Si衬底上生长石墨烯，结合界面结构调制，系统性地设计制备石墨烯-硅异质结结构；（2）研究石墨烯-硅异质结的新奇物理特性，以及界面结构对其物理性能的调制规律；（3）通过同步辐射角分辨光电子能谱与软x射线吸收谱相结合，原位研究异质结界面电子态和能带结构；结合界面结构和物理性能，研究异质结物理性能产生的微观机制。通过这些研究，有望揭示石墨烯-硅异质结的新奇物理特性及其产生的微观机制，为进一步发展高性能的石墨烯-硅异质结电子、光电子、磁电子等纳米器件奠定基础，并有力提升大科学装置的研究能力。

The zero-bandgap of graphene limits its further applications in electronics or optoelectronics. Therefore, it is a big challenge to use graphene to replace silicon completely. However, it could be used to improve silicon-based devices or develop novel devices with new physical mechanism by incorporating graphene into silicon. Based on our previous investigations, united with related stations at Beijing Synchrotron Radiation Facility (BSRF), we proposed the following studies: (1) Through tuning the interface structures, we would systematically design and fabricate graphene-silicon heterostructures by Molecular Beam Epitaxy (MBE) techinique. (2) We would study the novel physical properties of the graphene-silicon heterostructures, and the law of their physical properties with the variation of their interface structures. (3) By using synchrotron-radiation angle-resolved photoemission spectroscopy and near edge X-ray abostption fine structure (ARPES&NEXAFS), we would study the electron states and energy bandgap structure of the heterostructures on the interface. And combing the interface structures and physical properties, we would explore the microscopic mechanism of the physical properties’ origination. Through these studies, it is expected to exploit the physical properties and their originated physical mechanism of the graphene-silicon heterostructures, and to be helpful on the design of high-performance graphene-silicon heterostructure based electronics, optoelectronics, and magnetoelectronics.