最具前景和竞争力的石墨烯透明导电薄膜在绝缘衬底上的低温与可控制备是其光伏应用的前提。本项目拟通过等离子体增强化学气相沉积(PECVD)实现石墨烯的低温沉积，并基于"Smart Substrate"新型复合衬底的设计，通过特殊衬底结构自动调控碳的溶解和析出，最终实现绝缘衬底上层数可控、高质量石墨烯薄膜的低温制备。研究内容：(1)新型智能复合衬底的设计。利用金属不同碳溶解度和扩散率，设计双元金属、金属-绝缘体的智能复合衬底；(2)PECVD低温可控制备石墨烯。利用碳原子室温在Ni等金属表面的高扩散能力，借助等离子体对碳原子的动能加注，并通过制备的特殊衬底结构，低温下调控碳扩散和成核过程，诱导出绝缘基底上的石墨烯薄膜生长，实现其结构的可控制备、透明和导电的性能优化；(3)石墨烯的光伏应用。石墨烯的宽光谱透过和高光电性能，可望实现电池的宽光谱吸收和高的短路电流，获得高效、低成本的CdTe电池。

The very promising and challenging graphene films controllably synthesized directly on glass or SiO2/Si substrates is the premises of its photovoltaic application. A new composite substrate was designed basing on the as defined "Smart Substrate", which was made of a C-dissolving top (Ni) layer and a C-rejecting bottom (Cu) layer, it can evolve into a C-rejecting mixture, to autonomously regulate the C content at an elevated yet stable level at and near the surface over an extended duration. Furthermore, Plasma enhanced chemical vapor deposition was utilized to promote the low temperature growth of the graphene. This project is planed to realize the large scale fabrication of device-quality, defined layer-thickness graphene films for practical applications. The ability to synthesize graphene with tunable structural and optoelectronic properties directly on non-conducting substrates at low temperatures opens up new possibilities for the fabrication of multiple nanoelectronic devices.