本课题主要针对超高压(≥15kV)SiC IGBT器件少子寿命低、电导调制效应弱的瓶颈问题，进行一种新结构和一个模型的创新研究：(1)探索器件非平衡载流子的输运与调制行为规律，提出一种基于电荷增强调制技术的三维多沟道器件新结构。通过发射极引入类似FiNFET晶体管的三维多沟道MOS结构，提高电子注入效率，增强电导调制效应，并优化载流子浓度分布以加快空穴反向抽取速度，突破SiC IGBT所面临的高阻断电压与大电流密度、低损耗之间的尖锐矛盾关系。(2)从载流子电流扩散方程出发，引入多沟道电子注入增强因子，建立三维多沟道电荷调制增强模型，探讨注入增强模式下非平衡载流子的工作机制和物理图像，揭示多沟道结构尺寸、偏置条件对非平衡载流子浓度分布的作用规律，快速准确评估器件电导调制效果。本课题是一项超高压功率器件新结构与物理机理的应用基础研究，将为SiC IGBT器件的设计和制造提供一种新的方法和技术。

This project is aimed at the coming challenges of ultra-high voltage SiC IGBT with poor conductivity modulation due to low-level majority carrier lifetime, committed to two theoretical and experimental creative research topics: 1. The carrier transport mechanism in the drift region of SiC IGBT is discussed in detail. We propose a novel structure of SiC IGBT with three-dimension (3D) multi-channel structure to obtain a good carrier injection enhancement modulation in the Ndrift region, which act as a FiNFET transistor. The whole top-side cell structure is considered to be an n-emitter of high efficiency. By injection of electron from the channel, the emitter efficiency was improved with the aim to increase and optimize the distribution of the carrier concentration at the side of the n-emitter to decrease the Forward voltage drop and accelerate the extraction of minority carriers. With this, the tradeoff between the current density, switch loss and the breakdown voltage is successfully solved. 2. Based on the minority carrier diffusion equations, an injection enhancement modulation modeling of SiC IGBT with an injection enhancement factor is established considering the effect of electron injection from in multi- channel, exploring the inner functional relationship of the carrier concentration in the drift region, physical structure, dimensions and bias conditions. This project is a fundamental application research about the physics and methods of ultra-high voltage SiC devices and it will provide accurate design and afford an effective way to improve the performance of the high-power SiC IGBT transistor.