高效无镉半导体量子点发光二极管的构筑及光电性能研究

含镉半导体量子点发光二极管在照明与高性能显示领域成为备受关注的下一代技术，然而由于受国际社会对含镉电子产品的限制及其制备工艺相对复杂，成本较高等方面的挑战，研制无镉半导体量子点发光二极管是解决上述问题的重要途径之一。针对目前无镉半导体量子点发光二极管发光效率和色纯度低的问题，本项目拟开展以下研究内容： 1）开展无镉半导体量子点的可控制备与发光性能研究，重点研究无镉半导体量子点的不同纳米结构如元素的梯度分布、壳层厚度等对其发光性能的影响规律，提高无镉半导体量子点的显色性能和发光效率；2）开发具有不同载流子传输特性的金属氧化物纳米材料，调控其能级结构，实现各功能层之间的能级匹配，优化器件结构，提高器件光电性能和稳定性；3）研究无镉半导体量子点发光二极管中载流子注入和输运等基本物理问题，建立载流子注入和输运理论模型，构建“材料结构调控-器件性能优化-器件物理”三者之间的内在联系。

Cadmium-based quantum-dot light-emitting devices (QLEDs) have become a next-generation technology in the fields of lighting and full-color displays. However, it is challenging of the further applications of QLEDs due to the restriction of cadmium-based electronic devices and complicated fabrication process and high cost. Therefore, to develop cadmium-free QLEDs is one of the important approaches to solve the above problems. Aiming to the low efficiency and color purity of the present cadmium-free QLEDs, the research content of the proposal can be summarized as follows: 1) To study the controllable synthesis and luminescent properties of cadmium-free semiconductor QDs, and to highlight the effects of different nanostructures including the gradient distribution of the chemical composition and the shell thickness on the luminescent performance, which can enhance their colorful performance and luminescence efficiencies; 2) To develop metal oxide nanomaterials with different carrier transporting properties and to tailor their energy levels, and to realize the energy level matching, and to enhance the optoelectronic performance and device stability through the optimization of the device structure; 3) To study the fundamental physical problems of the cadmium-free QLEDs, such as the carrier injection and transport, and to build the theoretical models of carrier injection and transport, and to construct the connection of the three aspects including the nanostructures tailoring, optoelectronic performance optimizing and device physics.