随着InN窄直接带隙的发现及其物理特性的深入研究，InN近红外发光器件在光纤通信领域展现出诱人的前景和潜在的市场需求，很可能为光纤通信领域发展带来重大突破。然而，InN近红外发光器件少有报道，尤其是InN近红外激光发射未见报道。最近，我们在该方面研究上取得了一些新的进展，实现了InN器件的近红外电注入发光，然而发光效率并不理想。因此，提高器件发光效率、实现InN基器件近红外电致激光发射、弄清器件近红外激射机理等问题都有待于我们进一步研究。为此，我们创新地提出将NiO作为载流子注入层，同时设计几种带有量子阱、反射镜、电流限制窗口等新结构的InN-NiO组合激光器件，对载流子和光进行诱导和限制，进一步提高发光效率和增益，实现InN基器件的激光发射，并重点对其电致激射机理进行深入研究。如能取得突破，将使我国InN近红外激光器领域形成有核心专利的自主知识产权，具有重要的科学意义。

The discovery of narrow direct band gap and deep development of research on InN, has made the InN-based near-infrared (NIR) laser devices have attractive application prospects and potential market demands in the field of fibre communication. These devices may bring a breakthrough in the development of fibre communication. However, we have rarely seen literatures about the InN-based NIR LEDs, especially the InN-based NIR LDs have not been reported yet. Recently, we have made some fresh progresses in this aspect, successfully realizing the near-infrared electroluminescence of InN-based light emitting diodes. However, the luminous efficiency of the device is not ideal and it still needs further research on how to improve the luminous efficiency of the device, how to realize the near-infrared electrically-driven laser emission of InN-based devices and figure out the mechanisms of the NIR laser emission. Base on such observations, we come up with the idea innovatively of using NiO as the carrier injection layer. We propose several kinds of new structures based on InN-NiO structures with current-blocking layers or quantum-well layers or reflectors and so on to induce and limit the carriers and light-emissions for further improving the luminous efficiencies and gains of the devices and realizing the laser emission of InN-based devices. Then focus on the study about the electrically-driven laser emission mechanisms of these devices. And if some breakthroughs can be made, it will be of great scientific significance to get the core patent of independent intellectual property rights in the field of InN-based near-infrared laser devices.