GaN基蓝、绿光激光器在高密度信息存储、激光显示、空间光通讯以及生物技术等领域有着诱人的应用前景和巨大的市场需求，是近年来光电子领域研究的热门课题。但GaN基激光器制备方面还存在一些困难，GaN材料的P型掺杂等问题尚未很好解决，国内尚未制备出GaN基绿光激光器。最近，我们在该方面研究上取得了一些新的进展，成功制备了p型NiO薄膜材料，并将其作为载流子注入层和载流子限制层应用于GaN基异质结器件中，分别实现了p-NiO/n-GaN异质结器件的紫外激射和p-NiO/InGaN/GaN量子阱/n-GaN异质结器件的绿光激射。为此，我们提出几种新结构NiO-GaN组合激光器件，并重点对器件的电致激光发射机理进行研究。该项目的开展，将为我国宽带半导体蓝、绿光激光器研究开辟出另一条重要的新途径。如能取得突破，将使我国紫、蓝、绿光激光器领域形成有核心专利的自主知识产权，产生重大的经济和社会效益。

The blue and green lasers based on GaN materials have attractive application prospects and huge market demands in various fields of high-density information storage, laser display, space optical communications, biotechnology, etc. It has been the hot research topic in optoelectronic fields in recent years. But there are still some difficulties in the fabrication of GaN-based lasers, such as the problems in the doping of low resistivity and stable p-type GaN materials have not been addressed effectively, and the GaN-based green lasers have not been realized at home yet. Recently, we have made some fresh progresses in this aspect, successfully prepare the p-type NiO films and further apply it to GaN-based heterojunction devices acting as the carrier injection and blocking layer, and finally ultraviolet and green lasing action from the p-NiO/n-GaN and p-NiO/InGaN/GaN QW/n-GaN heterojunctions, respectively, are realized. Base on such observations, we propose several kinds of new structures based on NiO-GaN structured laser diodes and then focus on the study about the electrically-driven laser emission mechanisms of these devices. The development of the project will open up an important new way in our country for the study on the blue and green lasers based on wide-band-semiconductors. And if some breakthroughs can be made, it will be of great economic and social value to get the core patent of independent intellectual property rights in the fields of violet, blue and green lasers.