项目基于本征层薄膜晶硅电池（HIT）器件结构的研究成果，试图采用低温制备工艺获得i-CIGS薄膜，充分论证器件工艺适配性后，在CIGS薄膜太阳电池p-CIGS吸收层的前表面制备i-CIGS薄膜，建立基于HIT结构的CIGS薄膜太阳电池器件结构（Mo/p-CIGS/i-CIGS/CdS/ZnO/AZO），研究i-CIGS薄膜在p-CIGS/CdS界面上的插入所形成的p-i-n异质结的界面结构、功能层物相组成等材料学特征，讨论不同结构的i-CIGS薄膜对p-CIGS层表面可能存在的修饰和钝化作用机制，研究本征层对异质结阻抗和量子效率的影响；重点研究基于HIT结构CIGS薄膜电池器件的载流子分离和收集效果；并通过对比同一技术水平下基于HIT结构器件和传统VOC-Spike结构器件的光电性能及整体转换效率，明确HIT器件结构对CIGS薄膜太阳电池光电性能的影响规律。

In this project, the intrinsic CIGS (i-CIGS) film will be fabricated via Low-temperature preparation process on the basis of the research achievement about the device structure in hetero-junction with intrinsic thin-layer (HIT) solar cells. Specifically, the adaptability of the device preparation technology should be firstly justified. Then the i-CIGS film could be deposited on the front surface of p-CIGS absorbed layer followed fabricated interesting HIT device structure (Mo/p-CIGS/i-CIGS/CdS/ZnO/AZO) for CIGS solar cell. In addition, the materials characteristics (such as interface structure, phase composition of functional layer, ect.) of the p-i-n heterojunction will be investigated, where the p-i-n heterojunction could be formed by inserting i-CIGS film on the interface between p-CIGS and CdS. And the possible modification and passivation mechanism of i-CIGS with different structures for the surface of the P-CIGS/CdS layer will also be discussed. The effects of intrinsic layer on the heterojunction impedance and quantum efficiency, as well as the carrier separation and collection effectiveness of the CIGS solar cells with HIT structure will be studied. Besides, the comparative experiments were carried out to evaluate the photoelectric performance and conversion efficiency of the cell devices with intrinsic film structure (HIT structure) and VOC-Spike structure. Finally, the effect rules of the HIT device structure on the photoelectric performance of CIGS solar cells could be ascertained.