本项目首次将申请者在功率半导体领域提出的电场调制应用于新型GaN基功率半导体器件设计，提出并实现具有电场调制增强型AlGaN/GaN HEMT器件。主要进行三项创新研究：(1) 设计并提出具有电场调制效应新型增强型AlGaN/GaN HEMT器件结构，分析电场调制效应的物理本质 (2) 建立电场调制新型增强型AlGaN/GaN HEMT器件的电场分布模型和耐压模型，从本质上解释新型AlGaN/GaN HEMT器件电场优化的方法和机理 (3) 探索电场调制新型增强型AlGaN/GaN HEMT器件的关键工艺，并制备具有电场调制增强型AlGaN/GaN HEMT器件。通过项目实施，获得GaN基功率器件终端设计的新理论和新方法；获得击穿电压大于600V的自主知识产权器件样品，为我国发展新型GaN基功率器件奠定理论基础，为突破新型GaN基功率器件的关键技术提供支撑。

In this project, the electric field modulation effect, which had been proposed by the applicant, is applied to the new GaN-based power semiconductor devices for the first time. The novel Enhancement-Mode AlGaN/GaN HEMT is proposed with the electric field modulation effect. There are three innovation researches including of the theory and experiment in this project. Firstly, the novel Enhancement-Mode AlGaN/GaN HEMT with the electric field modulation effect is proposed for the first time, and the physical essence will be analyzed. Secondly, the electric field distribution and breakdown model will be set up to resolve essentially the mechanism of the electric field optimization for AlGaN/GaN HEMT. Thirdly, the key process of the novel Enhancement-Mode AlGaN/GaN HEMT will be explored to fabricate AlGaN/GaN HEMT sample with the electric field modulation effect. The new theories and methods of the terminal technology for AlGaN/GaN HEMT will be obtained by this project. The sample of AlGaN/GaN HEMT will be realized with the breakdown voltage greater than 600V. The basic theory will be founded for the power semiconductors based on GaN material. The key technologies will be provided to break through the design of the new GaN-based power semiconductor devices.