Bi对III-V半导体纳米线晶体结构的调控,机理及相关光电特性研究

III-V族半导体(如GaAs, InAs)纳米线由于在光电子技术领域(半导体探测器，激光器以及场效应晶体管等）的诱人应用前景越来越受到人们的关注。如何实现相关纳米线晶体结构的可控生长，是目前面临的具有挑战性的课题。本项目将利用分子束外延技术,探索利用Bi元素调控III-V 半导体(GaAs 和InAs) 纳米线的晶体结构, 实现不同晶体结构(闪锌矿和钎锌矿)纳米线可控生长。利用高分辨透射显微镜(HRTEM) 细致研究不同晶体结构纳米线材料的微结构,结合第一性原理, 揭示Bi调控半导体纳米线的生长机制.对相关不同晶体结构GaAs, InAs纳米线和纳米线同质结的光电特性作初步分析，相关的研究为制备新型光电探测器奠定研究基础。

In this project, bismuth (Bi) will be used to control the crystal structure of III-V semiconductor ( such as GaAs, and InAs) nanowires grown by molecular beam epitaxy. Different crystal structure (wurtzite and zinc blende) of GaAs and InAs nanowires will be grown. In this project, the microstructure of nanowires with different crystal phases will also be studied by high resolution transmission electron microscopy (HRTEM) .Combined with the first principle, the growth mechanism of Bi-induced phase control of semiconductor nanowires will be revealed. The photoelectric properties of GaAs and InAs nanowire with different crystal structure will be analyzed at last. This work will be very useful for novel nanowire based photodetector and quantum devices.