高质量InSb纳米线的分子束外延生长，微结构及输运特性研究

近几年来，III-V半导体纳米线材料由于其在半导体光电器件（半导体探测器，激光器以及场效应晶体管等）领域的很强应用前景受到广泛关注，目前已经能制备高质量的GaAs，InAs等纳米线，并制备相关的器件。而由于InSb 体材料有很窄的禁带宽度（0.17ev），很小的有效质量，很高的电子迁移和大的朗德因子，InSb纳米线有望在红外探测器件和新型半导体量子器件中有广泛应用。 但是目前InSb纳米线的生长技术很不成熟 ，如何制备高质量的InSb纳米线材料是一挑战。本课题将通过各种工艺的探索，利用分子束外延技术生长高质量的InSb基半导体纳米线和异质结。并实现InSb基纳米线阵列的有序生长。细致研究InSb基纳米线材料的微结构和生长机制，为实现高质量InSb纳米线的可控生长奠定基础。 另外对InSb 基纳米线的输运特性作深入分析，并初步研制红外探测器件。为制备新型光电探测器及新型的量子器件提供基

In recent years, III-V semiconductor nanowire materials attracts widespread attention due to their strong application in the field of semiconductor optoelectronic devices ( such as semiconductor detectors, laser and field effect transistors, etc.). High-quality GaAs and InAs nanowires based devices have been prepared. Among III-V semiconductor ,InSb is one of most interesting material systems， it has narrow bandgap (0.17eV ), very high electron mobility, small electron effective mass and very large electron magnetic moment. So InSb nanowires are expected to be widely used in the infrared detector and novel semiconductor quantum devices. But up to now, it is very difficult to prepare high quality InSb nanowires material. In this project, we will grow high-quality InSb-based semiconductor nanowire heterojunction by molecular beam epitaxy.Orderly InSb nanowire array will also be grown. The microstructure and its transport properties of the InSb based nanowire will be studied in detail . This work will be very useful for novel InSb nanowire based photodetector and quantum devices.