近年来激光雷达等主动探测技术得到快速发展，急需雪崩光电二极管等高灵敏红外探测器。在各种红外材料中InAs/GaSb超晶格及其红外焦平面探测器研究不断取得突破并得到成功应用，因此这类超晶格红外光电器件研究受到国际上广泛重视，在激光雷达系统等具有重要应用的超晶格红外雪崩二极管器件研究成为其中热点课题。本项目提出开展InAs/GaSb超晶格中红外雪崩光电二极管研究，首先要建立Sb化物中红外雪崩光电二极管器件结构设计的理论计算方法，并基于分子束外延技术实现高纯Sb化物材料和精细超晶格结构的精确控制生长。在获得高质量InAs/GaSb超晶格材料、并深入分析研究其红外光电物理性能基础上，根据理论模型提出中红外超晶格雪崩光电二极管器件的优化结构，建立InAs/GaSb超晶格器件制备半导体工艺平台、中红外雪崩二极管测试技术系统。最终制备2-5微米高性能雪崩二极管器件，为实现其在不同装备中的应用奠定基础。

In recent years high performance mid-infrared detector devices are urgently required due to the rapid developments of active sensing system such as laser radar systems. Among many infrared materials and devices, the InAs/GaSb superlattice (SLs) materials and the infrared focal plane array detectors have been investigated systematically and obtained breakthroughs and wide applications, so the developments of the SLs based infrared optoelectronic devices are attracted wide attention, thereinto, the SLs avalanche photodiodes (APD) become a hot topic in the world due to its potential applications for the laser radar systems. This project will focus on the InAs/GaSb SLs mid-infrared avalanche photodiodes. The theoretical models for designing SLs infrared APD will be built. High quality materials of the fine structure InAs/GaSb SLs will be grown by molecular beam epitaxy accurately. Based on the high quality SLs materials and the in-depth study of its infrared spectral and physical properties, the structure of the SLs infrared APD will be optimized according to the theoretical model. Semiconductor technology platform for the fabrication of InAs/GaSb SLs devices and mid-infrared APD test systems will also be established. Finally 2-5 μm mid-infrared InAs/GaSb SLs APDs will be demonstrated and thus to form a groundwork for the fabrication of SLs APD devices for its application in different equipments.