本项目面向我国航空航天抗辐射集成电路应用的迫切需求，针对抗辐射加固SOI器件与电路的短板问题，提出原创性的“无背栅（back-gate free）”SOI器件结构，采用离子注入/剥离层转移技术制备SOI衬底材料，并在埋氧化层（BOX）层中嵌入空腔，使SOI NMOS器件沟道下方无二氧化硅，彻底消除SOI NMOS器件总剂量辐射效应敏感区。传统的加固方法犹如“打针吃药”，以起到“预防免疫”的作用，而无背栅SOI器件则通过“微创手术”，实现“根除病灶”，使SOI器件对BOX层总剂量效应彻底“免疫”。本项目目标为研制出常用总剂量范围下（100Krad（Si）-1Mrad（Si））对总剂量辐射 “零响应”的无背栅SOI器件，并研究其抗辐射机理，为我国抗辐射加固SOI器件与电路提供全新技术路径。

Aiming at the urgent demand on aviation application for radiation hardened IC and focusing on bottleneck of radiation hardened SOI devices and circuits, we originally propose the back-gate free SOI device. Novel SOI substrates were fabricated by ion-cut layer transfer technology. Cavities were embeded in BOX layer to remove SiO2 under the channel regions of SOI NMOSFETs so that the sensitive area of total dose radiation was completely removed. Compared to the conventional hardening mothods, back-gate free SOI devices provide a more direct way to cut off the source of total dose effect and achieve complete immunity to total dose effect. The goal of this work is to make back-gate free SOI devices which has no response to total dose radiation effect under common dose (100Krad(Si)-1Mrad(Si)), to study on the mechanism of its total dose radiation hardness, and to provide a brand new method for radiation hardened SOI devices and circuits.