一维纳米结构体系的独特物理和化学性质有望解决传统薄膜光电器件中缺陷、应力等难以解决的问题，为光电器件的发展提供新的物质载体与思路。鉴于当今GaN基的白光LED过分依赖荧光粉调节，本项目拟克服此缺点，研制出无需荧光粉调节的、高效的、低电压工作的色温可调型白光和波长可调的可见光LED器件。通过对一维纳米ZnO阵列进行高浓度的Sb、Cu掺杂，构造ZnO纳米阵列/GaN薄膜基底的异质pn结；定量研究材料的高掺杂浓度、器件微结构和外加电压对材料载流子浓度和迁移率、器件中材料能级、内建电场、导（价）带能级差的调控和发射光波长偏移等的影响。本研究将发挥一维纳米结构在掺杂和载流子输运方面的优势，采用理论和实验结合方法，通过定量掺杂来解决ZnO纳米线中能级跃迁难调控、p型掺杂不稳定和载流子浓度与迁移率低的问题, 探索ZnO白光和可见光的发射机理，掌握新型白光和可见光LED的核心技术。

Some problems such as defects and strains in film optoelectronic devices can be solved by using one dimensional (1D) nanostructures since they can provide new strategy and material platform due to their special characteristics in physics and chemistry. Since phosphor powders are overused for present GaN based white LED, we hope to overcome this weak point and obtain white and visible LED with no-phosphor, high efficiency, low working voltage and adjustable color temperature. In our research, we will fabricate pn hetero-junctions of ZnO nanoarrays with high Sb, Cu doping concentration on GaN film; we will quantitatively study the control mechanism of the Sb, Cu doping concentration, the device microstructure and the imposed bias voltage on the concentration of carries, energy levels, internal build-in electric field, conduct (valence) -band offset and movement of light emission wavelength. This research will take advantages of 1D nanostructure in doping and carries transport, solve the problems in band gap engineering, unstable p-type doping and the low density and mobility of carriers, quantitatively reveal the mechanism of white and visible light emission in ZnO/GaN LED, and grasp the core technology of new type white and visible LED in the end.