1887年赫兹发现的光电效应对当今全球的能源、环境和资源的开发、保护与应用具有重大意义。光电导效应属内光电效应的一种，光照射下此效应材料的电导率大为增加。基于这种效应，人类开发出各种应用。但是，迄今为止，与这种正光电导效应数值相当的负光电导效应一直缺席，相应器件的开发与使用仅仅是梦。本项目拟利用光照下易捕获或屏蔽载流子等特性的半导体性InAs、Si和Ge量子点 (SQDs)，修饰具有大比表面积和小能隙的硫系二维层状结构半导体MoS2、MoSe2、WS2和WSe2（TMDs），设计成场效应器件，得到巨大负光电导效应并研究其机制，开发出各种光控逻辑运算器件。本项目的成功，将促进我国在先进电子材料领域的发展，在光传感、光通讯、光计算等方面做出贡献。

The photoelectric effect discovered by Hertz in 1887 is of great significance to the development, protection and applications of energy, environment and resources in today’s world. As a kind of photoelectric effect, a photoconductivity effect behaviors that the conductivity of the material is greatly increased under light irradiation. Based on this positive effect, humans develop a variety of applications. So far, however, due to the lack of the negative photoconductivity effect with a near equal value of a positive photoconductivity effect, the development and application of the device with a negative effect is only a dream. In this project, InAs, Si and Ge semiconductor quantum dots (SQDs), which are easy to capture or sceen carriers under light irradiation, are used to modify the two-dimensional (2D) layered transition metal dichalcogenides MoS2, MoSe2, WS2 and WSe2 (TMDs) with relatively small energy gaps and large specific surface area. Then we design it as field effect devices with a huge negative photoconductivity effect, and study its mechanism to develop a variety of optoelectronics logic computation devices. The success of this project will promote the development of advanced electronic materials in our country, and contribute to optical sensing, communication and computation