本项目主要针对AlGaN本征日盲紫外单光子雪崩探测器所面临的关键科学问题和技术瓶颈，重点开展基于AlN和AlGaN图形模板的高Al组分AlGaN材料的横向外延生长机理和动力学行为、应力-缺陷演变过程和位错的产生与湮灭机制以及p型掺杂的自补偿行为、Mg受主有效调制掺杂与基于价带结构的离化能研究，突破低缺陷密度AlGaN材料制备技术和高电导p-AlGaN材料的有效掺杂技术；深入研究异质结极化和能带工程对载流子碰撞电离的影响机制和协同调控规律，建立考虑了极化与缺陷散射的氮化物半导体载流子碰撞电离模型；开展精细掺杂对倍增层电场分布的精准调控研究，揭示高场下载流子隧穿效应与雪崩效应竞争机制，建立高场下载流子输运与漏电流物理模型；发展低损伤刻蚀、场板、表面钝化等器件关键工艺，解决器件制备中的技术难题。通过创新雪崩光电探测器设计理论，攻克材料与器件制备关键技术，实现日盲紫外单光子探测技术的突破。

Facing technical bottlenecks of developing the solar-blind single-photon detection technique based on AlGaN semiconductors, we will carry out the researches on growth mechanisms and kinetics of high-Al-composition AlGaN lateral epitaxial overgrown, stress-defect evolution, dislocation generation and annihilation mechanisms, and self-compensation behavior of p-type doping and control methods of Mg acceptor activation energy in order to overcome the difficulties in fabricating the low-dislocation-density AlGaN materials and in realizing high-conductivity p-type doping. The effects of heterostructure polarization, energy-band lineup and dislocation scattering on carrier impact ionization are investigated and their relations are also established. The precise control of electric field distribution on the multiplication region by fine doping will be developed, and the carrier transport and leakage models under high electric field are studied by analyzing the tunneling and avalanche mechanisms. The key device processes including low-damage etching, field plane, and surface passivation are developed together with innovating device design and the state-of-the-art AlGaN material growth in order to break through the solar-blind single-photon detection technique.