AlGaN基深紫外激光器具有体积小、易集成、寿命长、成本低的特点，在民用和军用领域都有着重要应用前景。但是受限于异质外延的高Al组分AlGaN材料高位错密度、发光偏振特性、器件制备等因素，实现电注入AlGaN基深紫外激光器仍面临许多挑战。本项目提出研制240~280nm波段基于AlN/GaN量子阱-微腔结构深紫外激子极化激元激光器。拟在纳米图形化蓝宝石衬底上运用改进的MOCVD外延工艺生长高质量AlGaN低维量子结构，将TE偏振发光模式的超薄AlN/GaN量子阱和双DBR微腔结合，利用激子-光子强耦合效应产生深紫外激子极化激元，实现玻色-爱因斯坦凝聚态产生激光。系统研究深紫外激子极化激元激光调控规律和机制，优化器件结构设计和芯片工艺，最后制备出室温稳定工作、低阈值、高效电注入深紫外激子极化激元激光器。

AlGaN-based deep ultraviolet (DUV) lasers show great potential applications in many civil and military fields by virtue of their small size, easy integration, long life and low cost. However, the electrically injected AlGaN DUV lasers still face many challenging issues due to the high dislocation density in heteroepitaxial high-Al-content AlGaN, the emission polarization mode, device fabrication technique. In this project, we propose to study the 240~280 nm DUV polariton laser based on AlN/GaN multiple quantum well-microcavity structure. We will utilize modified MOCVD epitaxial technique to achieve high quality AlGaN low-dimensional quantum structures on nanopatterned sapphire substrate. And then we combine the ultrathin AlN/GaN multiple quantum well with the microcavity consisting of two DBRs. The exciton-polaritons arising from the strong coupling of excitons and photons in this structure, will form laser under the Bose-Einstein condensation. We further investigate the manipulation discipline and mechanism of DUV polariton lasing. After systematical optimization of device design and fabrication technique, we finally realize the room temperature electrically injected DUV polariton laser with low threshold and high efficiency.