纳米尺度2D NC-FET寄生效应影响机理及其解析模型研究

二维沟道材料负电容场效应晶体管(2D NC-FET)因其优异的低压低功耗特性成为目前纳米尺度集成电路技术研发的前沿课题之一。2D NC-FET特有的沟道与栅介质材料、器件结构所带来的寄生效应是纳米尺度器件解析模型研究所面临的主要挑战，直接制约着2D NC-FET器件及其电路的精准仿真与设计。本项目基于TCAD数值仿真开展10nm及以下节点2D NC-FET寄生效应影响机理及其解析模型研究，阐明重要寄生效应对器件沟道载流子输运特性的影响机制、建立纳米尺度2D NC-FET精准电流与电容模型、评估相关寄生效应对SRAM存储单元等基本电路模块电学性能的影响。器件模型是连接工艺集成、器件制备和电路设计的桥梁，本研究聚焦下一代集成电路核心低功耗器件，不仅具有重要的科学意义和应用价值，而且与我国集成电路产业的战略布局密切契合。

Due to the excellent low voltage and low power characteristics, two-dimensional channel material negative capacitance field effect transistor (2D NC-FET) has become one of the cutting edge topics in the development of the world's top integrated circuit technology. The parasitic effects introduced by the unique channel material, gate dielectric material, and device structure of 2D NC-FET are the main challenges faced by the analytical modeling of nanoscale device, which limits the accurate simulation and design of 2D NC-FET device and its circuits. By using TCAD numerical simulation, this project is aimed to study the influence mechanism of parasitic effects and analytical modeling of 2D NC-FET with 10nm and below. That is, this project will clarify the influence mechanism of important parasitic effects on the carrier transport characteristics of the device, establish the precise current and capacitance models of nanoscale 2D NC-FET, and evaluate the impacts of parasitic effects on the electrical performance of basic circuit blocks such as SRAM cell. The analytical model is a bridge connecting process integration, device fabrication and circuit design. This project focuses on the core low-power device of next generation integrated circuit, which not only has important scientific significance and application value, but also closely matches the national strategic development planning.