石墨烯与CMOS电路单片集成高速光接口芯片研究

本项目以石墨烯光电探测器/光电混频器与硅基CMOS电路单片集成为目标，瞄准国际前沿光电交叉学科，结合石墨烯纳米光电子技术和硅基微电子技术，开展石墨烯与硅基CMOS电路单片集成高速光接口芯片研究。针对现有石墨烯微电子器件难以实现大规模集成，以及石墨烯光电子器件制作工艺复杂、难以实现和微电子器件集成的难点，创新性提出石墨烯光电集成方案。研究基于石墨烯/黑磷等二维材料的光电子器件和标准CMOS工艺兼容的基础理论、设计方法、制作工艺、测试表征和系统集成等一系列科学问题。通过CMOS后工艺，优化设计石墨烯光电子器件结构和制作工艺流程, 在集成电路芯片表面制作石墨烯光电器件，实现石墨烯与CMOS电路单片集成高速光接口芯片。石墨烯光电集成充分结合了石墨烯优良的光电特性和硅基集成电路绝佳的电学特性，是突破后摩尔时代集成电路芯片性能瓶颈的重要途径，具有重要的科学研究价值和潜在的应用前景。

This project researches monolithic opto-electronic integrated chip based on two-dimensional material, especially the monolithic integration of Graphene photodetector/ opto-electronic mixer and Silicon integrated chip. Aiming at interdisciplinary studies, Graphene nanotechnology combined with Silicon microelectronic technique, we develop the original research on the opto-electronic integrated chip based on Graphene. According to the fact that it is hard to realize the large scale integration of microelectronic devices and opto-electronic devices based on Graphene, we propose the solution of integration. Starting from the theoretical and experimental aspects, we study the scientific issues such as basic theory, design methods, fabrication methods, test, system integration. By post CMOS process, and optimization design of optoelectronic device structures and fabrication processes of Graphene, we realize the high performance of monolithic opto-electronic integrated chip based on Graphene. The Graphene opto-electronic integrated chip fully combines of excellent optical properties of Graphene and excellent electrical properties of Silicon, is the important ways to break through the bottleneck of Silicon integrated chip, showing the great scientific value and potential application prospects.