课题基金基金详情
SOI高压器件多界面辐射电荷场调制模型与加固新技术研究
结题报告
批准号:
62004034
项目类别:
青年科学基金项目
资助金额:
24.0 万元
负责人:
周锌
依托单位:
学科分类:
集成电路器件、制造与封装
结题年份:
2023
批准年份:
2020
项目状态:
已结题
项目参与者:
周锌
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中文摘要
抗辐射高压集成电路是航空航天与国防装备自主发展的“卡脖子”技术。SOI高压LDMOS是核心器件,由于氧厚、界面多且面积大,面临着严重复杂的总剂量效应。目前关键科学问题辐射电荷场调制研究主要基于单硅氧界面,且常规工艺加固技术存在诸多局限性。.针对多界面辐射电荷场调制,本项目围绕电势场和载流子分布变化规律展开深入创新研究。建立多界面辐射电荷场调制耐压模型,揭示电势场分布变化规律及耐压退化机理,为抗辐射加固提供普适性理论指导;另辟蹊径,提出逆调制场加固技术,打破常规设计规则,获得耐压与电离辐射非单调降低新关系;提出辐射电荷量化表征方法,建立考虑了辐射电荷的等效电阻模型,揭示载流子分布变化规律,实现场氧和埋氧界面辐射电荷量化表征。本项目国际首次提出辐射电荷场概念,通过新模型、新技术、新方法,突破SOI高压LDMOS器件总剂量效应瓶颈,为抗辐射SOI高压集成电路芯片研制奠定基础。
英文摘要
Radiation hardening high voltage IC is the "neck sticking" technology for the independent development of weapon equipment, of which core device is high voltage LDMOS. Due to more thick oxide layer with large area, SOI high voltage LDMOS is subjected to severe and complex total-ionizing-dose effect. Up to date, investigations on the scientific problem that radiation induced charge field modulation are based mainly on singe silicon-oxide interface. .Aiming at multi-interface radiation induced charge field modulation, this project starts from the potential field and carrier distribution change law to carry out in-depth innovation research. Multi-interface radiation induced charge field modulation model on breakdown voltage is proposed to reveal the modulation law on electric potential field distribution and breakdown voltage degradation mechanism, which lays a theoretical foundation for radiation hardening; Finding a new path, inverse modulation field radiation hardening technology is proposed, in which nonmonotonic decreasing relation between breakdown voltage and ionizing radiation is achieved by breaks conventional design rule; Radiation induced charge quantitative characterization method is proposed by building equivalent conduction resistance with considering radiation induced charge, which reveal the modulation law on carrier distribution and achieve quantitative characterization for radiation induced charge in field oxide and buried oxide layers. This project proposes radiation charge field modulation concept for the first time, and break through the bottleneck of TID effect for SOI high voltage LDMOS, which establishes the foundation for develop radiation hardening SOI high voltage IC.
期刊论文列表
专著列表
科研奖励列表
会议论文列表
专利列表
DOI:10.1109/ted.2020.3045378
发表时间:2021-04
期刊:IEEE Transactions on Electron Devices
影响因子:3.1
作者:Zhangyi’an Yuan;M. Qiao;Xinjian Li;Dican Hou;Shuhao Zhang;Xin Zhou;Zhaoji Li;Bo Zhang-
通讯作者:Zhangyi’an Yuan;M. Qiao;Xinjian Li;Dican Hou;Shuhao Zhang;Xin Zhou;Zhaoji Li;Bo Zhang-
DOI:10.1109/ted.2021.3072019
发表时间:2021-06-01
期刊:IEEE TRANSACTIONS ON ELECTRON DEVICES
影响因子:3.1
作者:Zhou, Xin;Li, Zhixuan;Zhang, Bo
通讯作者:Zhang, Bo
DOI:10.1109/tns.2022.3231877
发表时间:2022
期刊:IEEE Transactions on Nuclear Science
影响因子:--
作者:Xin Zhou;Langtao Chen;Chen Chen;Ming Qiao;Zhaoji Li;Bo Zhang
通讯作者:Bo Zhang
DOI:--
发表时间:2022
期刊:电子与封装
影响因子:--
作者:周淼;汤亮;何逸涛;陈辰;周锌
通讯作者:周锌
DOI:--
发表时间:2022
期刊:微电子学
影响因子:--
作者:周 淼;倪晓东;何逸涛;陈 辰;周 锌
通讯作者:周 锌
SOI高压结型屏蔽器件辐射复合场调制机理与新结构研究
  • 批准号:
    --
  • 项目类别:
    面上项目
  • 资助金额:
    53万元
  • 批准年份:
    2022
  • 负责人:
    周锌
  • 依托单位:
国内基金
海外基金