铁电半导体因兼有铁电与半导体性质，可通过铁电极化实现对半导体效应的调控而引起了广泛的研究兴趣，为进一步开发新型的多功能半导体器件提供了新的途径。为满足器件研制的要求，迫切需要具有更强的铁电-半导体耦合效应的新体系以及更加丰富的调控手段。本项目通过在弛豫铁电单晶衬底上生长钙钛矿型具有铁电-半导体耦合效应的新材料体系，利用单晶衬底的逆压电性应原位调控外延生长的铁电半导体薄膜的应变状态，实现对铁电-半导体耦合效应的调控，重点研究原位应变这一调控手段对铁电半导体薄膜微结构、铁电极化及物理性能的本征影响规律及相关的物理机制，建立应变、微结构与物理性能间的定量关系，并在此基础上，制备多功能的铁电电阻存储单元。

In recent years ferroelectric semiconductor has attracted great attention due to the strong coupling behavior between the ferroelectric and semiconductor properties. For the development of new multifunctional semiconductor device, enhanced coupling response along with more abundant controlling methods was expected. The present study aims to grow perovskite-type epitaxial ferroelectric semiconductor thin film directly on relaxor ferroelectric single-crystal substrate and utilize the in-situ strain created in the substrate by the converse piezoelectric effect to enhance the ferroelectric-semiconductor coupling bebavior. The emphasis will be focused on the relations between the strain, microstructure, and the physical properties. The ferroelectric resistive memory unit will be further developed based on the obtained materials.