Ferroelectric and dielectric properties of La0.6Sr0.4CoO3-buffered 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 thin film by pulsed laser deposition

Ferroelectric and dielectric properties of La0.6Sr0.4CoO3-buffered 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 thin film by pulsed laser deposition
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脉冲激光沉积La0.6Sr0.4CoO3缓冲0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3薄膜的铁电和介电性能

DOI:
10.1016/j.jallcom.2013.11.043
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发表时间:
2014-03
影响因子:
6.2
通讯作者:
Wangzhou Shi
Wangzhou Shi
中科院分区:
材料科学2区
文献类型:
--
作者:
Qirong Yao;Feifei Wang;Chung Ming Leung;Yanxue Tang;Tao Wang;Chengchao Jin;Wangzhou Shi

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摘要采用脉冲激光沉积技术在Pt/Ti/ sio2 /Si衬底上生长了La 0.6 Sr 0.4 CoO 3 (LSCO)-缓冲的0.7 Pb (Mg 1/3 Nb 2/3) O 3 - 0.3 pbtio3 (PMNT)薄膜。由于钙钛矿PMNT薄膜具有相似的晶体结构和晶格常数,导电LSCO层的引入可以有效抑制焦绿石相的形成,提高其结晶质量。饱和极化P s为~ 44 μC/cm 2,剩余极化P r为~ 16.5 μC/cm 2, 1 kHz时介电常数ε 33 T/ε 0为~ 2833,在~ 10 kV/mm下介电可调性为67%,获得了增强的铁电性能和介电性能。所有这些都使其成为MEMS器件的潜在候选器件。
Abstract In present work, La 0.6 Sr 0.4 CoO 3 (LSCO)-buffered 0.7 Pb (Mg 1/3 Nb 2/3) O 3–0.3 PbTiO 3 (PMNT) thin film was grown on Pt/Ti/SiO 2/Si substrate by using pulsed laser deposition. The introduction of the conductive LSCO layer can effectively depress the formation of pyrochlore phase and improve the crystallization quality of perovskite PMNT thin film ascribed to the similar crystal structure and lattice constant. Enhanced ferroelectric and dielectric properties were obtained with the saturated polarization P s of∼ 44 μC/cm 2, remanent polarization P r of∼ 16.5 μC/cm 2, dielectric constant ε 33 T/ε 0 of∼ 2833 at 1 kHz, and dielectric tunability of 67% under∼ 10 kV/mm. All these make it a potential candidate for MEMS devices.
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