新型高迁移率二维Bi2OS2的可控制备及其高性能光电探测

目前，二维光电探测器面临二维半导体迁移率低、光学吸收特性差、器件性能低等难题。随着器件小型化及探测精度的要求越来越高，二维高性能光电探测器的制备亟待研究。针对存在的难题，本项目独辟蹊径，提出制备一种新型、高迁移率二维半导体Bi2OS2，并开发基于二维Bi2OS2的高性能光电探测器。提出采用空间限域化学气相沉积+牺牲剂辅助方法，营造气氛浓度均匀的沉积环境，实现二维Bi2OS2单晶的可控制备；研究二维Bi2OS2微结构及光电特性层数依赖关系，通过调控二维Bi2OS2的层数优化其光电特性；提出界面调控新策略，通过构筑Te纳米线/二维Bi2OS2杂化异质结形成强的界面耦合，进一步增强光吸收，提高器件性能；开展二维Bi2OS2及其探测器的光电性能理论计算，并与实验结果相互验证，进而开发出基于高迁移率二维Bi2OS2的新型高性能光电探测器。本研究为高迁移率二维Bi2OS2在未来光电领域的应用奠定基础。

At present, two-dimensional (2D) photodetectors are faced with the problems of low mobility of 2D semiconductors, poor optical absorption characteristics, and low performance of the device. With the increasing requirements for miniaturization of devices and detection accuracy, the preparation of high-performance 2D photodetectors is in urgent need of research. In view of the existing problems, this project has created a unique approach, proposed the preparation of a new type of high-mobility 2D semiconductor Bi2OS2, and developed a high-performance 2D photodetector based on 2D Bi2OS2. It is proposed to use the sacrificial agent auxiliary space-limited chemical vapor deposition method to create a deposition environment with a uniform atmosphere concentration and to realize the controllable preparation of the 2D Bi2OS2 single crystal. The dependence of the microstructure and photoelectric characteristics of 2D Bi2OS2 on the number of layers will be studied deeply, and thus the photoelectric characteristics of 2D Bi2OS2 will be optimized by adjusting its number of layers. A new strategy for interface control has been proposed by constructing a hybrid heterojunctions between Te nanowires and 2D Bi2OS2 to form strong interfacial coupling, to further enhance the optical absorption characteristics of the active layer, and to improve the performance of the device. Theoretical calculations on the photoelectric performance of 2D Bi2OS2 and its photodetector will be carried out. The theoretical data will be verified with the experimental results, and then a new high-performance photodetector based on the high mobility 2D Bi2OS2 will be developed. The research of this project will provide substantial experimental and scientific foundation for the application of high mobility 2D Bi2OS2 in the photoelectric field in the future.