小尺寸、高性能绝缘体上场效应晶体管（XOI FET）的研究是微电子技术发展的迫切要求。但小尺寸XOI p-FET面临驱动性能差、沟道迁移率低、稳定性差等关键问题亟待解决。本项目创新性地提出原子层沉积（ALD）均匀掺杂工艺实现Al掺杂WSe2（WSex:Al）薄膜中Al的均匀分布，获得具有高迁移率、稳定的p型导电二维WSex:Al薄膜，再以WSex:Al为沟道、以SrHfON为栅介质制备高驱动性能XOI p-FET。研究WSex:Al的ALD制备、微结构及物理特性，分析XOI p-FET的微结构及其对电学特性的影响。理论计算和实验相互验证，阐明WSex:Al薄膜p型导电特性的影响机理，揭示SiO2/WSex:Al与WSex:Al/SrHfON二元界面散射耦合作用机制，获得小尺寸XOI p-FET器件载流子输运特性的变化规律。为提高XOI p-FET驱动性能及丰富载流子输运理论提供科学依据。

The studies of a new generation of small size, high performance XOI FET have been an urgent requirement for the further development of microelectronics technology. However, these key problems in the study of XOI p-FET need to be solved urgently such as the poor drive performance of the device,low mobility and bad stability of p-channel material, et al. This project develops a new p-type conductive two dimensional WSex:Al thin film with high mobility, good stability and uniform distribution by using atomic layer uniform deposition process. Preparation of a XOI p-FET with the channel based on WSex:Al and high-k gate dielectric based on SrHfON. This project will study the ALD processes, micro-structure and physical properties of the WSex:Al film, and investigate the influnce of micro-structure on the electrical properties of the XOI p-FET. The mapping relationship between the electrical properties of small size XOI p-FET devices and micro-structure will be established. Theoretical calculations and experiments are verified mutually to obtain the p-type conductivity characteristics of WSex:Al thin film, reveal the interfacial scattering coupling mechanism between SiO2/WSex:Al and WSex:Al/SrHfON, and clarify the variation rule of carrier transport characteristics and effect mechanism of small size XOI p-FET device. This project will provide the experimental and scientific basis for further improving the drive performance of XOI p-FET and enriching carrier transport theory of XOI p-FET.