高性能p型场效应晶体管（p-FET）的研究是微电子技术发展的迫切要求。目前，p-FET面临沟道迁移率低、驱动性能差等关键问题亟待解决。本项目提出采用两步法在二维WS2中掺入 Nb，创新性地制备一种高迁移率的p型导电二维单层NbxW1-xS2。再以单层NbxW1-xS2为沟道、以SrHfON为栅介质制备新型p-FET，并提出引入空位缺陷降低NbxW1-xS2/Pd界面接触电阻、提高器件驱动性能的新思路。研究单层NbxW1-xS2的两步法制备、微结构及物理特性，分析p-FET各界面微结构及界面的缺陷调控规律。理论计算和实验相互验证，揭示二维单层NbxW1-xS2的p型导电特性变化规律和影响机理，阐明NbxW1-xS2/Pd界面电学性质的缺陷调控机制，获得多元界面耦合作用对p-FET器件驱动性能的影响规律及影响机理。为进一步提高p-FET驱动性能和丰富FET界面调控理论提供充实的实验和科学依据。

The studies of high performance p-FET have been an urgent requirement for the further development of microelectronics technology. However, these key problems in the study of p-FET need to be solved urgently such as poor drive performance of the device, and low mobility of channel material, et al. This project develops a novel p-type two-dimensional monolayer NbxW1-xS2 with high mobility and good stability by introduing Nb in WS2 film using two-step process. Preparation of new p-FETs with the channel based on monolayer NbxW1-xS2 and high-k gate dielectric based on SrHfON film. New idea has been proposed to decrease the contact resistance of NbxW1-xS2/Pd and to improve the drive performance of the device by introducing vacancies in monolayer NbxW1-xS2. This project will study the two-step processes, micro-structure and physical properties of monolayer NbxW1-xS2, and investigate the regulatory law of vacancy defect on interfacial micro-structure and the electrical properties of the p-FET. Theoretical calculations and experiments are verified mutually to reveal effects of Nb doping on the p-type conductivity properties of the two-dimensional monolayer NbxW1-xS2, to clarify the interfacial defect regulatory mechanism of NbxW1-xS2/Pd heterojunction, and to obtain influnce rule and mechanism of multiple interfaces coupling on drive performance of p-FET device. This project will provide the innovative research ideas on further improving the drive performance of p-FET, and present substantial experimental and scientific basis for further enriching defect regulatory theory of FET.