基于纳米带场效应晶体管的ppb量级高灵敏SO2半导体传感器研究

SO2是大气污染物最重要的成分之一。准确、灵敏、廉价的SO2传感器对于环境监测和人类健康非常重要。电阻型半导体气体传感器具有廉价、寿命长等优点，是应用最广泛的气体探测器之一。但是，目前半导体SO2传感器工作温度高（200-550摄氏度）、探测下限差（通常高于1 ppm），制约了产业化发展。申请者拟针对这一国际挑战性问题，以获得探测下限低于100 ppb (实用标准)，分辨率10 ppb，灵敏度高于40%的室温SO2传感器为研究目标，通过构筑固体绝缘层-金属膜电极、空气绝缘层-金属膜电极，固体绝缘层-导电纳米带电极等构型，开展SnO2/ZnO纳米带场效应型SO2传感器研究。同时，研究传感器对SO2的微观响应机制，澄清当前SO2半导体传感器响应机理存在的争议，为进一步优化性能提供理论依据。

SO2 is one of the most dangerous air pollutants that impair environment and human health.It is of great importance to measure the low concentration of SO2 in air accurately and fast for human health protection and air-quality monitoring.Semiconductor resistor sensors are one of the most common used gas sensors to detect toxic and flammable gases because of their distinguished merits such as low cost, long lasting, high sensitivity, and good reliability et al. However, only a little effort has been made to the SO2 semiconductor sensors. Most reported SO2 semiconductor sensors require the operating temperature at 200-550 C, demonstrate the low sensitivity with detection limit higher than 1 ppm. Here, in order to obtain the high-sensitivity room-temperature SO2 semiconductor sensors (detection limit lower than 100 ppb, resolution at 10 ppb, sensitivity higher than 40%),the SnO2/ZnO nanoribbon field-effect transistor SO2 sensors will be studied based on different configurations (solid dielectric-metal film electrode, air dielectric-metal film electrode, and solid dielectric-conductive nanoribbon electrode). The sensing mechanism will be studied to resolve the controversy of the response mechanism and to further optimize the performance.