如何在保证曝光质量的前提下提高扫描速度，是浸没式光刻技术面临的重要挑战，其关键在于避免高速扫描过程中硅片表面残留液渍进而引发曝光缺陷。浸没流场动态润湿行为的研究是实现残留液渍有效控制的基础。为此，本项目将开展浸没流场动态润湿行为与残留液渍控制的基础研究。研究多相介质特性与表面微观形态对界面力分布的影响规律，揭示牵拉润湿界面滑移与缝隙流场粘性剪切特性，研究多相界面力、粘性剪切力、惯性力及内外压力场等综合作用下的自由边界动态平衡机理，建立动态润湿模型，进而揭示自由边界破裂机理，以及不同界面润湿条件对残留液渍行为的影响规律，并以此研究通过控制润湿条件避免残留液渍的方法，为浸没式光刻机扫描速度与产能的提高提供基础理论与方法依据，同时为我国浸没式光刻技术的发展与自主创新提供基础支撑。

How to improve the scan speed without sacrificing the imaging quality is an important challenge faced by immersion lithography. The key point is to avoid residual droplets on the wafer surface during wafer motion which will lead to exposure defects. As the research of dynamic wetting for immersion lithography is the basis of residual droplets controlling, the project will focus on the fundamental research of both dynamic wetting behavior and control method of residual droplets. Firstly, the influences of multiphase material characteristics and surface microstructure on the distribution of interfacial tension are investigated. The boundary slip behavior together with viscous shear character of liquid confined in micro-gap under pulling and wetting are also revealed. With the complicated environment involves multiphase interfacial tension, viscous shear force, inertial force, internal and external pressure field, the dynamic equilibrium mechanism of gas-liquid interface is studied to establish the dynamic wetting model. Then, the mechanism which makes the gas-liquid interface break down, and the influence rule of different interfacial wetting conditions on the behavior of residual droplets are indicated. Finally, methods to prevent the liquid loss by changing different wetting conditions are proposed. This project will provide fundamental theories and methods to the improvement of scan speed and productivity for immersion lithography machine and give a basic support to the development and independent innovation in immersion lithography technology of China.