10纳米以下图形加工的关键工艺问题研究

高分辨纳米加工是22nm节点以下集成电路制造以及人工微纳结构器件研发中的关键技术。以曝光、显影、薄膜沉积、干法刻蚀、湿法剥离为主要工艺的自上而下纳米加工是目前超大规模集成电路制造的主要选择。根据国际半导体技术路线发展图，集成电路的关键尺寸在2020年将达到10nm（几十个原子）左右。然而，当纳米结构的尺寸到10nm以下时，由于各种工艺和物理限制因素，其加工方法将与当前产业界的常规工艺有所区别，而目前研究人员对该尺寸下的关键加工工艺还无系统的研究。本项目前瞻性地对10nm以下图形加工的通用工艺进行研究以得到各种工艺的物理限制因素并探索突破限制的方法，为未来10nm以下技术节点极大规模集成电路制造提供技术积累和工艺选择。主要研究内容包括：（1）10nm以下图形加工的抗蚀剂工艺及其显影行为研究；（2）该尺度下纳米结构力学稳定性对加工分辨率的限制及其相应的解决办法；（3）该尺度下的高分辨图形转移。

High-resolution nanofabrication is the key technique for sub-22-nm-node integrated circuits and nanodevices. Currently, top-down fabrication method, including lithography, development, thin-film deposition, reactive ion ethcing,and lift off, is the doninant option for high volume industrial manufacturing and also for laboratory-scale research and development. According to the International Technology Roadmap for Semiconductors (ITRS), the critical dimension (CD) for ultra-large-scale integrated circuits will reach to 10 nm or below (several tens of atoms) in 2020. The dominant nanofabrication technique will still be top-down method. However, when the dimension of nanostructures is less than 10 nm, the fabrication processes will be different from those currently being used due to the physical and processing limits of materials. Up to now, researchers have not carried out systematic studies on the key processes at the sub-10-nm scale. In this project, we propose to do a systematic study on the general processes in sub-10-nm fabrcation, which will enable us understand the physical limiting factors on the fabrication resolution and subsqently help us overcome the limiting factors for futher improving the resolution. The main research plans include: (1)the resist process for sub-10-nm fabrication, especially focusing on its development process, (2) the influence of capillary force and material mechanical stability on the fabrication resolution and the methods to overcome it, and (3) high-resolution pattern transfer techniques at the sub-10-nm scale, including reactive ion etching, ion milling, lift-off, and nanoimprinting.