锡基卤化物钙钛矿不仅能带可调，具有高的载流子迁移率以及较长的载流子扩散长度，且毒性较小，在光电探测领域展示了极大的应用潜力。然而，锡基卤化物钙钛矿较差的稳定性，阻碍了器件的应用。基于此，本项目研究少铅的铅-锡混合钙钛矿纳米线的制备及其在全无机异质结自驱动光电探测器中的应用。通过改变卤素元素的比例以及铅锡的含量控制钙钛矿的能带，以调控器件的主要响应波段；采用压力辅助退火的方法消除纳米线之间的微界面，有利于载流子迅速被收集，减少复合；利用钝化、修饰或者插入界面层等工艺手段进行界面优化减小暗电流、提供界面势垒阻止载流子回流以降低光生载流子的复合。深入理解界面能带分布与载流子传输机制，揭示材料生长、器件结构及界面特性对器件性能提升、稳定性增强的影响机制，为无铅钙钛矿光电器件应用提供一定的前期研究基础。

The tin-based halide perovskite is not only adjustable in the band gap, it behaves the high carrier mobility and the long carrier diffusion length, also it is less toxic, demonstrating great application potential in the field of photodetection. However, the poor stability of the tin-based halide perovskites hinders the application of the device. Based on above, this project studies the preparation of lead-tin mixed perovskite nanowires with less lead and its application in fully inorganic heterojunction self-powered photodetectors. The energy band of perovskite is controlled by changing the proportion of halogen elements and the Pb/Sn ratio to control the main response wavelength of the device. The pressure-assisted annealing method is used to eliminate the micro-interface between the nanowires, which facilitates the rapid collection of carriers, reducing the recombination of carriers. Using passivation and modification or inserting interface layer to optimize the interface and reduce the dark current of the device, which provides an interface barrier to prevent carrier reflow and reduce the recombination of photogenerated carriers. From above, we can deep understand the energy band at the interface and the carrier transport mechanism, reveal the improvement of the device performance and the enhancement of the stability influenced by the material growth, device structure and interface characteristics, provide a certain preliminary research basis for the application of the lead-free perovskite optoelectronic devices.