CdZnTe晶体被认为是最有应用前景的室温高能射线探测材料，而深能级陷阱是影响其电学性能和探测器性能的关键因素之一。本项目拟以室温辐射探测器用高阻CdZnTe晶体为对象，研究深能级陷阱对晶体电学性能和探测器性能的影响规律。主要研究内容包括：（1）采用热激电流和热电效应谱对高阻CdZnTe晶体中深能级陷阱的分布特性进行精确测量和分析，揭示CdZnTe晶体中深能级陷阱的主要形成机理辐照损伤对深能级陷阱的影响规律；（2）研究深能级陷阱对CdZnTe载流子迁移率和寿命的影响规律以及CdZnTe晶体的高阻形成机理；（3）研究深能级陷阱对CdZnTe晶体空间电荷分布和内电场的影响规律，在此基础上建立深能级陷阱与铁电和电阻转变特性之间的内在关联；（4）在上述研究基础上，进一步研究深能级陷阱对CdZnTe探测器性能的影响规律，为优化器件性能和提高晶体质量提供理论基础。

CdZnTe has been considered as the most promising candidate for room temperature radiation detectors. The electrical properties and the performance of CdZnTe are largely affeted by its deep level traps. This project focuses on the relationship among the deep level traps, electrical properties and detector performances of CdZnTe single crystals. The key research issues include: (1) measurment and analysis of deep level traps in CdZnTe crystal to reveal the formation mechanism of deep level traps of CdZnTe cyrstals with different composition, growth conditions and annealing process, and the effects of radiation damage on the deep level traps. (2) the effects of the deep level traps on the carrier transportation properties of CdZnTe crystals, by experimental measurements and numerical modeling, to reveal the dependences of resistance, carrier mobility and lifetime on the deep level traps. (3) the effects of deep level traps on CdZnTe crystal space charge distribution and electric filed, to reveal the its effects on the ferroelectric and the resistive transition of CdZnTe. (4) On the basis of the above studies, to study the effects of deep level traps on the CdZnTe detector performance.