设计合成具有良好热性能的小分子分子玻璃类化合物和低分子量改性酚醛树脂高分子聚合物，系统研究这两类极紫外光刻胶主体材料的基础物理化学性质。通过分子结构设计，得到由成膜主体材料、光致产酸剂、各种助剂和溶剂组成的光刻胶组合物，通过极紫外光刻实验，系统考察光刻过程中的每个环节，得到不同分子结构材料与良好灵敏度、分辨率和线边粗糙度之间的关系。系统研究在极紫外光光照下光刻胶组合物的光化学过程和对极紫外光的吸收过程与作用机理，研究由于高能量辐射所诱发的化学键的断裂、新键的产生过程与机理、自由基的形成过程与机理、光酸产生与扩散的动力学机制、产生小分子化合物（气体）的过程与形成机制，在实验数据的基础上，对产生的小分子化合物的种类和数量进行系统分析，得到光刻胶组合物在极紫外光光照下的分解及产生气体的理论模型，为进一步指导光刻胶的实际应用提供理论和实验依据。

Small molecular glass compounds and low molecular modified phenolic resin polymers with good thermal performance will be synthesized as photoresists for extreme ultraviolet(EUV) lithography, their basic physical and chemical properties will be studied. The photoresist composition will be gained by mixing with photoresist, photoacid generator, different additives and solvent using the optimization of photoresist formulation. The different EUV lithography processes will be studied by EUV lithography experiment for the purpose of evaluating the relation of good sensitivity, resolution and line edge roughness with different structures of the photoresists. The outgassing properties of the photoresist composition will be investigated with EUV photoresist exposure device. The photochemical process and mechanism, the absorption of EUV light of the photoresist composition will be studied, including the broken of old chemical bond, the generation of new chemical bond induced by high-energy irradiation, the formation of free radicals, the generation of photoacid and dynamical process of the acid diffusion, the formation of small compounds(outgas). On the basis of experimental data, the class and quantity of the small compounds(outgas) will be theoretically analyzed to get the theoretical models of photolysis and outgassing process of photoresist composition upon EUV irradiation, which will be used as theoretical and experimental guidance on the practical application of the EUV photoresist.